Projects per year
Personal profile
Research interests
Electronic & Computer Engineering - Compound semiconductor materials and devices
Electronic & Computer Engineering - III-V on Si integration by epitaxy
Electronic & Computer Engineering - Photonics devices
Electronic & Computer Engineering - Power semiconductor devices
Electronic & Computer Engineering - III-V on Si integration by epitaxy
Electronic & Computer Engineering - Photonics devices
Electronic & Computer Engineering - Power semiconductor devices
Related documents
Education/Academic qualification
PhD in Electrical Engineering, PhD, Rice University
1981
Expertise related to UN Sustainable Development Goals
In 2015, UN member states agreed to 17 global Sustainable Development Goals (SDGs) to end poverty, protect the planet and ensure prosperity for all. This person’s work contributes towards the following SDG(s):
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SDG 7 Affordable and Clean Energy -
SDG 9 Industry, Innovation, and Infrastructure -
SDG 11 Sustainable Cities and Communities
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Dive into the research topics where Kei May LAU is active. These topic labels come from the works of this person. Together they form a unique fingerprint.
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Collaborations and top research areas from the last five years
Recent external collaboration on country/territory level. Dive into details by clicking on the dots or
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1200 V High Reliability GaN Vertical MOSFETs for High Power Applications
LAU, K. M. (PI), GONG, Z. (Team member), LI, J. (Team member), HE, Y. (Team member) & ZHU, R. (Team member)
Jiangsu Crossing Photoelectric Technology Co., Ltd., Innovation and Technology Commission, Enkris Semiconductor Hong Kong Limited
3/10/25 → 2/10/27
Project: Research
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State Key Laboratory of Displays and Opto-Electronics (SKLDOE)
SRIVASTAVA, A. K. (CoI), POON, A. W. O. (CoI), CHEN, K. J. (CoI), LAU, K. M. (CoI), KWOK, H. S. (CoI), WONG, M. (CoI), NEYTS, K. A. E. (PI), YUE, C. P. (CoI), LIN, Y. H. (CoI), FAN, Z. (CoPI), YAN, H. (CoI), HALPERT, J. E. (CoI), ZHANG, R. (CoI), XIE, Y. (CoI) & ZHOU, Y. (CoI)
Innovation and Technology Commission
1/07/25 → …
Project: Research
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Silicon Photonics and the Heterogeneous Epitaxy III-V Semiconductors on Silicon for Advanced Photonic Systems-on-chip
LAU, K. M. (CoPI) & TSANG, H. K. (PI)
1/01/25 → 31/12/26
Project: Research
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Development of a III-V on SOI Platform for Silicon Photonics Integration
ZHAO, B. (Team member), LAU, K. M. (PI), HUANG, J. (Team member), LI, J. (Team member), LIN, Q. (Team member) & XUE, Y. (CoI)
Innovation and Technology Commission
1/11/24 → 31/10/26
Project: Research
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A new paradigm of integrating III/V transistors on SOI
LAU, K. M. (PI)
1/07/24 → 30/06/27
Project: Research
Research output
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755 nm InP/GaAs0.65P0.35 quantum dot laser with polarization-dependent emission from type-I and type-II band alignments
GU, W., ZHAO, B., XUE, Y. & LAU, K. M., 2 Jun 2025, In: Optics Express. 33, 11, p. 23732-23739 8 p.Research output: Contribution to journal › Journal Article › peer-review
Open Access1 Link opens in a new tab Citation (Scopus) -
980 nm QW Micro-Lasers With Ultra-Low Threshold
LIN, Q., Xue, Y., HUANG, J., GU, W. & Lau, K. M., Sept 2025, In: IEEE Journal of Selected Topics in Quantum Electronics. 31, 5, 1900409.Research output: Contribution to journal › Journal Article › peer-review
1 Link opens in a new tab Citation (Scopus) -
Fully Etched Low-Back-Reflection and High-Efficiency Silicon Waveguide Grating Couplers with Minimum feature size above 260 nm
Zhou, X., Xue, Y., Ye, F., Feng, Z., He, J., Sun, X., Lau, K. M. & Tsang, H. K., 15 Apr 2025, In: Journal of Lightwave Technology. 43, 8, p. 3854-3859 6 p., 10818764.Research output: Contribution to journal › Journal Article › peer-review
2 Link opens in a new tab Citations (Scopus) -
Fully-Vertical GaN-on-SiC trench MOSFETs
Li, J., Zhu, R., Ming Wong, K. & May Lau, K., Feb 2025, In: IEEE Electron Device Letters. 46, 2, p. 282-285 4 p., 10807277.Research output: Contribution to journal › Journal Article › peer-review
11 Link opens in a new tab Citations (Scopus) -
GaN vertical groove power MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) device on SiC substrate and manufacturing method thereof: [China]
LAU, K. M. (Key Inventor), ZHU, R. (Inventor) & LI, J. (Inventor), 12 Sept 2025, IPC No. H10D 30/66, H10D 30/01, 6 Mar 2024, Priority date 6 Mar 2024Research output: Patent
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光子集成的新范式 — SOI 上的直接横向 III-V 族材料生长
LAU, K. M. (Invited speaker)
11 Jun 2025Activity: Talk or presentation › Keynote
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Compound Semiconductors for All except for CMOS
LAU, K. M. (Invited speaker)
28 May 2025Activity: Talk or presentation › Plenary
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A New Paradigm for Photonic Integration – Direct Lateral III-V Growth on SOI for lasers and more
LAU, K. M. (Invited speaker)
21 May 2025Activity: Talk or presentation › Invited
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DII (diversity, inclusion, and integration) of III-V devices and technologies in photonics
LAU, K. M. (Invited speaker)
1 Apr 2025Activity: Talk or presentation › Plenary
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A New Paradigm for Electronic and Photonic Integration – Direct III-V Growth on Si (Epitaxy)
LAU, K. M. (Invited speaker)
2 Dec 2024Activity: Talk or presentation › Plenary