Projects per year
Personal profile
Research interests
Electronic & Computer Engineering - III-Nitride materials and devices
Related documents
Education/Academic qualification
PhD in Electronic and Computer Engineering, PhD, The Hong Kong University of Science and Technology
2022
Expertise related to UN Sustainable Development Goals
In 2015, UN member states agreed to 17 global Sustainable Development Goals (SDGs) to end poverty, protect the planet and ensure prosperity for all. This person’s work contributes towards the following SDG(s):
-
SDG 9 Industry, Innovation, and Infrastructure
Fingerprint
Dive into the research topics where Renqiang ZHU is active. These topic labels come from the works of this person. Together they form a unique fingerprint.
- 1 Similar Profiles
Collaborations and top research areas from the last five years
Recent external collaboration on country/territory level. Dive into details by clicking on the dots or
Projects
- 1 Active
-
1200 V High Reliability GaN Vertical MOSFETs for High Power Applications
LAU, K. M. (PI), GONG, Z. (Team member), LI, J. (Team member), HE, Y. (Team member) & ZHU, R. (Team member)
Jiangsu Crossing Photoelectric Technology Co., Ltd., Innovation and Technology Commission, Enkris Semiconductor Hong Kong Limited
3/10/25 → 2/10/27
Project: Research
-
Enhanced breakdown voltage in GaN vertical trench MOSFETs through mesa-trench field balancing and mesa shielding ring structure
Fan, X., Zhu, R., Luo, H., Yang, W. & Jiang, H., 5 Jan 2026, In: Semiconductor Science and Technology. 41, 1, 10 p., 015001.Research output: Contribution to journal › Journal Article › peer-review
1 Link opens in a new tab Citation (Scopus) -
3.0 kV β-Ga2O3-Based Vertical p-n Heterojunction Diodes With Helium- Implanted Edge Termination
Han, J., Sun, N., Pei, X., Wang, R., Fan, K., Zhu, R., Wang, M., Zhu, X., Li, X., Li, J., Huo, N., Ye, J. & Liu, X., 2025, In: IEEE Transactions on Electron Devices. 72, 6, p. 2879-2883 5 p.Research output: Contribution to journal › Journal Article › peer-review
7 Link opens in a new tab Citations (Scopus) -
3 kV/2.9 mΩ⋯ cm2β-Ga2O3 vertical p-n heterojunction diodes with helium-implanted edge termination and oxygen post annealing
Han, J., Sun, N., Pei, X., Fan, K., Xu, Y., Huang, Z., Zhu, R., Huo, N., Li, J., Mao, J., Ye, J. & Liu, X., 19 Aug 2025, Proceedings of the 37th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2025. Institute of Electrical and Electronics Engineers Inc., p. 357-360 4 p. 11118209. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs).Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review
1 Link opens in a new tab Citation (Scopus) -
Enhancing key performance of vertical GaN MOS capacitors through GaOx interface technology
Lin, J., Pei, X., Li, X., Liu, H., Zhu, R., Zhang, C., Chiu, H. C., Liang, J., Liu, H., Mao, J. & Liu, X., 19 Aug 2025, Proceedings of the 37th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2025. Institute of Electrical and Electronics Engineers Inc., p. 337-340 4 p. 11118206. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs).Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review
-
Enhancing key performance of vertical p-NiO/n-GaN heterojunction diodes through plasma treatment and oxygen post-annealing
Huang, Y., Wang, M., Sun, N., Zhu, R., Li, X., Liang, J., Ye, J., Zhang, C., Liu, H., Mao, J. & Liu, X., 19 Aug 2025, Proceedings of the 37th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2025. Institute of Electrical and Electronics Engineers Inc., p. 333-336 4 p. 11117458. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs).Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review
2 Link opens in a new tab Citations (Scopus)