Projects per year
Personal profile
Research interests
Electronic & Computer Engineering - III-Nitride materials and devices
Expertise related to UN Sustainable Development Goals
In 2015, UN member states agreed to 17 global Sustainable Development Goals (SDGs) to end poverty, protect the planet and ensure prosperity for all. This person’s work contributes towards the following SDG(s):
Related documents
Education/Academic qualification
PhD in Electronic and Computer Engineering, PhD, The Hong Kong University of Science and Technology
2022
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Collaborations and top research areas from the last five years
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Projects
- 1 Active
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1200 V High Reliability GaN Vertical MOSFETs for High Power Applications
LAU, K. M. (PI), GONG, Z. (Team member), LI, J. (Team member), HE, Y. (Team member) & ZHU, R. (Team member)
3/10/25 → 2/10/27
Project: Research
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3.0 kV β-Ga2O3-Based Vertical p-n Heterojunction Diodes With Helium- Implanted Edge Termination
Han, J., Sun, N., Pei, X., Wang, R., Fan, K., Zhu, R., Wang, M., Zhu, X., Li, X., Li, J., Huo, N., Ye, J. & Liu, X., 2025, In: IEEE Transactions on Electron Devices. 72, 6, p. 2879-2883 5 p.Research output: Contribution to journal › Journal Article › peer-review
1 Citation (Scopus) -
3 kV/2.9 mΩ⋯ cm2β-Ga2O3 vertical p-n heterojunction diodes with helium-implanted edge termination and oxygen post annealing
Han, J., Sun, N., Pei, X., Fan, K., Xu, Y., Huang, Z., Zhu, R., Huo, N., Li, J., Mao, J., Ye, J. & Liu, X., 19 Aug 2025, Proceedings of the 37th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2025. Institute of Electrical and Electronics Engineers Inc., p. 357-360 4 p. 11118209. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs).Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review
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Enhancing key performance of vertical GaN MOS capacitors through GaOx interface technology
Lin, J., Pei, X., Li, X., Liu, H., Zhu, R., Zhang, C., Chiu, H. C., Liang, J., Liu, H., Mao, J. & Liu, X., 19 Aug 2025, Proceedings of the 37th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2025. Institute of Electrical and Electronics Engineers Inc., p. 337-340 4 p. 11118206. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs).Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review
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Enhancing key performance of vertical p-NiO/n-GaN heterojunction diodes through plasma treatment and oxygen post-annealing
Huang, Y., Wang, M., Sun, N., Zhu, R., Li, X., Liang, J., Ye, J., Zhang, C., Liu, H., Mao, J. & Liu, X., 19 Aug 2025, Proceedings of the 37th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2025. Institute of Electrical and Electronics Engineers Inc., p. 333-336 4 p. 11117458. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs).Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review
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Fully-Vertical GaN-on-SiC trench MOSFETs
Li, J., Zhu, R., Ming Wong, K. & May Lau, K., Feb 2025, In: IEEE Electron Device Letters. 46, 2, p. 282-285 4 p., 10807277.Research output: Contribution to journal › Journal Article › peer-review
5 Citations (Scopus)