A Novel p-GaN Gate Double-Channel HEMT Technology for High-Frequency Power Electronics and Amplifiers

Project: Research

適用於高頻功率電子和功率放大器的一種新型p-GaN柵極雙溝道晶體管技術

Status	Finished
Effective start/end date	1/05/22 → 30/04/24

Electroluminescence and Gate Carrier Dynamics in a Schottky-Type p-GaN Gate Double-Channel GaN HEMT
Feng, S., Liao, H., Chen, T., Chen, J., Cheng, Y., Hua, M., Zheng, Z. & Chen, K. J., 1 Oct 2023, In: IEEE Electron Device Letters. 44, 10, p. 1592-1595 4 p.
Research output: Contribution to journal › Journal Article › peer-review
8 Link opens in a new tab Citations (Scopus)
Linearity Characterization of Enhancement-Mode p-GaN Gate Radio-Frequency HEMT
Cheng, Y., Zheng, Z., Ng, Y. H. & Chen, K. J., 1 Nov 2023, In: IEEE Electron Device Letters. 44, 11, p. 1813-1816 4 p.
Research output: Contribution to journal › Journal Article › peer-review
10 Link opens in a new tab Citations (Scopus)
RF Enhancement-Mode -GaN Gate HEMT on 200 mm-Si Substrates
Cheng, Y., Ng, Y. H., Zheng, Z. & Chen, K. J., 1 Jan 2023, In: IEEE Electron Device Letters. 44, 1, p. 29-31 3 p.
Research output: Contribution to journal › Journal Article › peer-review
33 Link opens in a new tab Citations (Scopus)

Project Details