Project Details
Chinese Project Title
面向Micro-LED顯示的雙柵氧化物TFT背板技術
| Status | Finished |
|---|---|
| Effective start/end date | 1/08/22 → 31/07/24 |
UN Sustainable Development Goals
In 2015, UN member states agreed to 17 global Sustainable Development Goals (SDGs) to end poverty, protect the planet and ensure prosperity for all. This project contributes towards the following SDG(s):
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SDG 9 Industry, Innovation, and Infrastructure
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Research output
- 2 Journal Article
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Deep Sub-Micron Self-Aligned Bottom-Gate Amorphous InGaZnO Thin-Film Transistors With Low-Resistance Source/Drain
Zhang, Y., Li, J., Zhang, Y., Yang, H., Guan, Y., Chan, M., Lu, L. & Zhang, S., 1 Aug 2023, In: IEEE Electron Device Letters. 44, 8, p. 1300-1303 4 p.Research output: Contribution to journal › Journal Article › peer-review
15 Link opens in a new tab Citations (Scopus) -
Sub-100 nm Self-Aligned Top-Gate Amorphous InGaZnO Thin-Film Transistors With Gate Insulator of 4 nm Atomic-Layer-Deposited AlOx
Zhang, Y., Li, J., Li, J., Huang, T., Guan, Y., Zhang, Y., Yang, H., Chan, M., Wang, X., Lu, L. & Zhang, S., 1 Mar 2023, In: IEEE Electron Device Letters. 44, 3, p. 444-447 4 p.Research output: Contribution to journal › Journal Article › peer-review
16 Link opens in a new tab Citations (Scopus)