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Gate Stack Design and Scaling of Enhancement-mode p-GaN Gate High-Electron-Mobility Transistors (HEMTs) for RF Applications

Project: Research

Project Details

Chinese Project Title

適合於射頻應用的增強型p-GaN柵HEMT器件的柵極疊層設計及縮放技術
StatusActive
Effective start/end date1/01/2431/12/26

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