Skip to main navigation Skip to search Skip to main content

Monolithic Integration of High-/Low-side GaN HEMT Power Switches Based on Cost-Effective Engineered Bulk Si Substrate

Project: Research

Project Details

Chinese Project Title

基於低成本工程化體硅襯底的高低邊GaN功率開關單片集成技術
StatusFinished
Effective start/end date1/06/2331/01/26

Fingerprint

Explore the research topics touched on by this project. These labels are generated based on the underlying awards/grants. Together they form a unique fingerprint.