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p-channel MOSFET technology based on GaN-on-Si p-GaN gate power HEMT platform: toward high-functionality high-efficiency GaN power integration

Project: Research

Project Details

Chinese Project Title

基于硅基p型栅氮化镓功率器件技术平台的p沟道MOSFET技术研究:通往高性能高能效的氮化镓功率集成
StatusFinished
Effective start/end date30/07/2131/12/23

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