Reliability Evaluation and Testing Platform for High-Speed GaN Power-Switching Devices

Project: Research

GaN高速功率開關器件的可靠性評估及測試平臺

Status	Finished
Effective start/end date	1/07/18 → 31/12/20

I_G- and V_GS-Dependent Dynamic R_ONCharacterization of Commercial High-Voltage p-GaN Gate Power HEMTs
Zhong, K., Wei, J., He, J., Feng, S., Wang, Y., Yang, S. & Chen, K. J., 1 Aug 2022, In: IEEE Transactions on Industrial Electronics. 69, 8, p. 8387-8395 9 p.
Research output: Contribution to journal › Journal Article › peer-review
40 Link opens in a new tab Citations (Scopus)
A Physics-Based Empirical Model of Dynamic I_OFFunder Switching Operation in p-GaN Gate Power HEMTs
Wang, Y., Chen, T., Hua, M., Wei, J., Zheng, Z., Song, W., Yang, S., Zhong, K. & Chen, K., Sept 2021, In: IEEE Transactions on Power Electronics. 36, 9, p. 9796-9805 10 p., 9364720.
Research output: Contribution to journal › Journal Article › peer-review
5 Link opens in a new tab Citations (Scopus)
Characterization of Dynamic Threshold Voltage in Schottky-Type p-GaN Gate HEMT under High-Frequency Switching
Zhong, K., Xu, H., Zheng, Z., Chen, J. & Chen, K. J., Apr 2021, In: IEEE Electron Device Letters. 42, 4, p. 501-504 4 p., 9365020.
Research output: Contribution to journal › Journal Article › peer-review
24 Link opens in a new tab Citations (Scopus)

Project Details