Vertical GaN-based Trench MOSFETs on Silicon

Project: Research

矽上GaN基垂直溝槽MOSFET

Status	Finished
Effective start/end date	1/01/19 → 30/06/22

Vertical GaN trench MOSFETs with step-graded channel doping
Zhu, R., JIANG, H., TANG, C. W. & Lau, K. M., 14 Jun 2022, In: Applied Physics Letters. 120, 24, 242104.
Research output: Contribution to journal › Journal Article › peer-review
15 Link opens in a new tab Citations (Scopus)
1300 V normally-OFF p-GaN gate HEMTs on Si with high ON-state drain current
JIANG, H., LYU, Q., Zhu, R., Xiang, P., Cheng, K. & Lau, K. M., Feb 2021, In: IEEE Transactions on Electron Devices. 68, 2, p. 653-657 5 p., 9303380.
Research output: Contribution to journal › Journal Article › peer-review
81 Link opens in a new tab Citations (Scopus)
Monolithic integration of ultraviolet light emitting diodes and photodetectors on a p-GaN/AlGaN/GaN/Si platform
Lyu, Q., Jiang, H. & Lau, K. M., 15 Mar 2021, In: Optics Express. 29, 6, p. 8358-8364 7 p.
Research output: Contribution to journal › Journal Article › peer-review

Open Access
44 Link opens in a new tab Citations (Scopus)

Project Details