β-Ga2O3 MOSFETs with nitrogen-ion-implanted back-barrier: DC performance and trapping effects

Masataka Higashiwaki; Man Hoi Wong; Ken Goto; Yoshinao Kumagai; Hisashi Murakami

β-Ga₂O₃ MOSFETs with nitrogen-ion-implanted back-barrier: DC performance and trapping effects

Masataka Higashiwaki, Man Hoi Wong, Ken Goto, Yoshinao Kumagai, Hisashi Murakami

Research output: Contribution to conference › Conference Paper

Original language	English
Publication status	Published - 2019
Externally published	Yes
Event	46th International Symposium on Compound Semiconductors (ISCS 2019), in Compound Semiconductor Week 2019 (CSW 2019) - Duration: 1 Jan 2019 → 1 Jan 2019

Conference

Conference	46th International Symposium on Compound Semiconductors (ISCS 2019), in Compound Semiconductor Week 2019 (CSW 2019)
Period	1/01/19 → 1/01/19

Access to Document

https://hdl.handle.net/1783.1/120764

Cite this

@conference{ab9d3cb49bed459fad9ba2e309b86cd7,

title = "β-Ga2O3 MOSFETs with nitrogen-ion-implanted back-barrier: DC performance and trapping effects",

author = "Masataka Higashiwaki and Wong, \{Man Hoi\} and Ken Goto and Yoshinao Kumagai and Hisashi Murakami",

year = "2019",

language = "English",

note = "46th International Symposium on Compound Semiconductors (ISCS 2019), in Compound Semiconductor Week 2019 (CSW 2019) ; Conference date: 01-01-2019 Through 01-01-2019",

}

TY - CONF

T1 - β-Ga2O3 MOSFETs with nitrogen-ion-implanted back-barrier: DC performance and trapping effects

AU - Higashiwaki, Masataka

AU - Wong, Man Hoi

AU - Goto, Ken

AU - Kumagai, Yoshinao

AU - Murakami, Hisashi

PY - 2019

Y1 - 2019

M3 - Conference Paper

T2 - 46th International Symposium on Compound Semiconductors (ISCS 2019), in Compound Semiconductor Week 2019 (CSW 2019)

Y2 - 1 January 2019 through 1 January 2019

ER -