侧向选区异质外延绝缘体上硅的 III-V 族有源器件（特邀）

III-V active devices and their efficient coupling and integration with passive components are crucial for the further development of silicon photonics. Heteroepitaxy for integrating efficient III-V lasers on silicon can enable waferscale silicon photonic-integrated circuits, maximizing the benefits of silicon photonics at low cost, high throughput, large bandwidth, and large^-scale integration. This article examines III-V active devices on silicon^-on^-insulator (SOI) via lateral selective epitaxy, focusing on the integration of III-V lasers and photodetectors on SOIs and their efficient in^-plane coupling with silicon^-based passive components. This article discusses their unique characteristics, including bufferless, inplane configurations and laterally stacked active regions, as well as their future development prospects.