多晶硅薄膜的等离子氢化新工艺

曾祥斌; 徐重阳; 王长安; 赵伯芳; 周雪梅; 张洪涛; 饶瑞; Johnny K. O. Sin

多晶硅薄膜的等离子氢化新工艺

Translated title of the contribution: A Novel Plasma Hydrogenation Technique for Polycrystalline Silicon Thin Films

曾祥斌
, 徐重阳
, 王长安
, 赵伯芳
, 周雪梅
, 张洪涛
, 饶瑞
, Johnny K. O. Sin

Department of Electronic and Computer Engineering

Research output: Contribution to journal › Journal Article › peer-review

Abstract

根據多晶硅薄膜氫化的微觀機理 ,提出改進氫化效果的工藝方法。在不增加設備投資的情況下 ,采用該方法能夠明顯提高多晶硅薄膜的氫化效果 ,從而提高薄膜晶體管的性能 ,ION/ IOFF從1 0 3量級增加到 1 0 5量級 ,氫化工藝的處理時間也相應縮短。 The plasma hydro genation mechanism of po ly-Si thin film is inv estig ated and a nov el hydro g ena tion technique fo r po ly-Si thin film w as presented. Using this technique, hydr og ena tio n o f poly-Si thin film is effectiv ely enhanced and pe rfo rmances of po ly-Si TFTs a re impr ov ed. ION /IOFF of the po ly-Si TFT is r aised fr om 10 3 to 10 5 . And the hy dr og ena tio n time is also r educed.

Translated title of the contribution	A Novel Plasma Hydrogenation Technique for Polycrystalline Silicon Thin Films
Original language	Chinese (Simplified)
Pages (from-to)	415-417
Journal	微電子學=Microelectronics
Volume	30
Publication status	Published - Feb 2000

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https://hdl.handle.net/1783.1/107605

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@article{6669310e134e4eaf8ae31daaa7703a32,

title = "多晶硅薄膜的等离子氢化新工艺",

abstract = "根據多晶硅薄膜氫化的微觀機理 ,提出改進氫化效果的工藝方法。在不增加設備投資的情況下 ,采用該方法能夠明顯提高多晶硅薄膜的氫化效果 ,從而提高薄膜晶體管的性能 ,ION/ IOFF從1 0 3量級增加到 1 0 5量級 ,氫化工藝的處理時間也相應縮短。 The plasma hydro genation mechanism of po ly-Si thin film is inv estig ated and a nov el hydro g ena tion technique fo r po ly-Si thin film w as presented. Using this technique, hydr og ena tio n o f poly-Si thin film is effectiv ely enhanced and pe rfo rmances of po ly-Si TFTs a re impr ov ed. ION /IOFF of the po ly-Si TFT is r aised fr om 10 3 to 10 5 . And the hy dr og ena tio n time is also r educed.",

author = "曾祥斌 and 徐重阳 and 王长安 and 赵伯芳 and 周雪梅 and 张洪涛 and 饶瑞 and Sin, \{Johnny K. O.\}",

year = "2000",

month = feb,

language = "Chinese (Simplified)",

volume = "30",

pages = "415--417",

journal = "微電子學=Microelectronics",

issn = "1004-3365",

}

TY - JOUR

T1 - 多晶硅薄膜的等离子氢化新工艺

AU - 曾祥斌, null

AU - 徐重阳, null

AU - 王长安, null

AU - 赵伯芳, null

AU - 周雪梅, null

AU - 张洪涛, null

AU - 饶瑞, null

AU - Sin, Johnny K. O.

PY - 2000/2

Y1 - 2000/2

N2 - 根據多晶硅薄膜氫化的微觀機理 ,提出改進氫化效果的工藝方法。在不增加設備投資的情況下 ,采用該方法能夠明顯提高多晶硅薄膜的氫化效果 ,從而提高薄膜晶體管的性能 ,ION/ IOFF從1 0 3量級增加到 1 0 5量級 ,氫化工藝的處理時間也相應縮短。 The plasma hydro genation mechanism of po ly-Si thin film is inv estig ated and a nov el hydro g ena tion technique fo r po ly-Si thin film w as presented. Using this technique, hydr og ena tio n o f poly-Si thin film is effectiv ely enhanced and pe rfo rmances of po ly-Si TFTs a re impr ov ed. ION /IOFF of the po ly-Si TFT is r aised fr om 10 3 to 10 5 . And the hy dr og ena tio n time is also r educed.

AB - 根據多晶硅薄膜氫化的微觀機理 ,提出改進氫化效果的工藝方法。在不增加設備投資的情況下 ,采用該方法能夠明顯提高多晶硅薄膜的氫化效果 ,從而提高薄膜晶體管的性能 ,ION/ IOFF從1 0 3量級增加到 1 0 5量級 ,氫化工藝的處理時間也相應縮短。 The plasma hydro genation mechanism of po ly-Si thin film is inv estig ated and a nov el hydro g ena tion technique fo r po ly-Si thin film w as presented. Using this technique, hydr og ena tio n o f poly-Si thin film is effectiv ely enhanced and pe rfo rmances of po ly-Si TFTs a re impr ov ed. ION /IOFF of the po ly-Si TFT is r aised fr om 10 3 to 10 5 . And the hy dr og ena tio n time is also r educed.

M3 - Journal Article

SN - 1004-3365

VL - 30

SP - 415

EP - 417

JO - 微電子學=Microelectronics

JF - 微電子學=Microelectronics

ER -

多晶硅薄膜的等离子氢化新工艺

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