100 nm gate length self-aligned E-mode N-polar GaN MISFETs with current gain cutoff frequency (ft) of 120 GHz

Research output: Contribution to conference › Conference Paper

Original language	English
Publication status	Published - 2010
Event	6th International Workshop on Nitride Semiconductors (IWN 2010) - Duration: 1 Jan 2010 → 1 Jan 2010

Conference	6th International Workshop on Nitride Semiconductors (IWN 2010)
Period	1/01/10 → 1/01/10

Access to Document

@conference{78e1d53899bc4082a467474d52e2c324,

title = "100 nm gate length self-aligned E-mode N-polar GaN MISFETs with current gain cutoff frequency (ft) of 120 GHz",

author = "Nidhi and S. Dasgupta and U.K. Mishra and U. Singisetti and J.S. Speck and B.L. Swenson and B.J. Thibeault and Wong, \{Man Hoi\}",

year = "2010",

language = "English",

note = "6th International Workshop on Nitride Semiconductors (IWN 2010) ; Conference date: 01-01-2010 Through 01-01-2010",

}

TY - CONF

T1 - 100 nm gate length self-aligned E-mode N-polar GaN MISFETs with current gain cutoff frequency (ft) of 120 GHz

AU - Nidhi, null

AU - Dasgupta, S.

AU - Mishra, U.K.

AU - Singisetti, U.

AU - Speck, J.S.

AU - Swenson, B.L.

AU - Thibeault, B.J.

AU - Wong, Man Hoi

PY - 2010

Y1 - 2010

M3 - Conference Paper

T2 - 6th International Workshop on Nitride Semiconductors (IWN 2010)

Y2 - 1 January 2010 through 1 January 2010

ER -