2-V 0.8-μM CMOS monolithic RF filter for GSM receivers

William S.T. Yan; Ricky K.C. Mak; Howard C. Luong

2-V 0.8-μM CMOS monolithic RF filter for GSM receivers

William S.T. Yan^*, Ricky K.C. Mak, Howard C. Luong

^*Corresponding author for this work

Department of Electronic and Computer Engineering

Research output: Contribution to journal › Conference article published in journal › peer-review

8 Citations (Scopus)

Abstract

A 2-V monolithic CMOS second-order RF filter for GSM receiver front-ends is presented. A negative transconductance cell is used to compensate the loss of on-chip inductors for Q-tuning purpose. By using a Miller capacitor, center-frequency tuning can be achieved to compensate for process variation. A prototype was fabricated by 0.8μm N-well single-poly-triple-metal CMOS technology and occupies an area of 868.2×748.4μm². Q value can vary from 3.4 to 629 and center frequency (f_c) can vary from 687 to 830 MHz. For Q of 30 and f_c of 829.6 MHz, the filter achieves a power gain of 2.0dB, a noise figure of 24.5dB, 1-dB compression point of -34dBm, input referred third-order intercept point of -22dBm, image rejection of 24.2dB, and power dissipation of 45.8 mW.

Original language	English
Pages (from-to)	569-572
Number of pages	4
Journal	IEEE MTT-S International Microwave Symposium Digest
Volume	2
Publication status	Published - 1999
Event	Proceedings of the 1999 IEEE MTT-S International Microwave Symposium Digest 'The Magic Touch of Microwaves' - Anaheim, CA, USA Duration: 13 Jun 1999 → 19 Jun 1999

Cite this

@article{a39ca656f69a41879865e200d79407a4,

title = "2-V 0.8-μM CMOS monolithic RF filter for GSM receivers",

abstract = "A 2-V monolithic CMOS second-order RF filter for GSM receiver front-ends is presented. A negative transconductance cell is used to compensate the loss of on-chip inductors for Q-tuning purpose. By using a Miller capacitor, center-frequency tuning can be achieved to compensate for process variation. A prototype was fabricated by 0.8μm N-well single-poly-triple-metal CMOS technology and occupies an area of 868.2×748.4μm2. Q value can vary from 3.4 to 629 and center frequency (fc) can vary from 687 to 830 MHz. For Q of 30 and fc of 829.6 MHz, the filter achieves a power gain of 2.0dB, a noise figure of 24.5dB, 1-dB compression point of -34dBm, input referred third-order intercept point of -22dBm, image rejection of 24.2dB, and power dissipation of 45.8 mW.",

author = "Yan, \{William S.T.\} and Mak, \{Ricky K.C.\} and Luong, \{Howard C.\}",

year = "1999",

language = "English",

volume = "2",

pages = "569--572",

journal = "IEEE MTT-S International Microwave Symposium Digest",

issn = "0149-645X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1999 IEEE MTT-S International Microwave Symposium Digest 'The Magic Touch of Microwaves' ; Conference date: 13-06-1999 Through 19-06-1999",

}

TY - JOUR

T1 - 2-V 0.8-μM CMOS monolithic RF filter for GSM receivers

AU - Yan, William S.T.

AU - Mak, Ricky K.C.

AU - Luong, Howard C.

PY - 1999

Y1 - 1999

N2 - A 2-V monolithic CMOS second-order RF filter for GSM receiver front-ends is presented. A negative transconductance cell is used to compensate the loss of on-chip inductors for Q-tuning purpose. By using a Miller capacitor, center-frequency tuning can be achieved to compensate for process variation. A prototype was fabricated by 0.8μm N-well single-poly-triple-metal CMOS technology and occupies an area of 868.2×748.4μm2. Q value can vary from 3.4 to 629 and center frequency (fc) can vary from 687 to 830 MHz. For Q of 30 and fc of 829.6 MHz, the filter achieves a power gain of 2.0dB, a noise figure of 24.5dB, 1-dB compression point of -34dBm, input referred third-order intercept point of -22dBm, image rejection of 24.2dB, and power dissipation of 45.8 mW.

AB - A 2-V monolithic CMOS second-order RF filter for GSM receiver front-ends is presented. A negative transconductance cell is used to compensate the loss of on-chip inductors for Q-tuning purpose. By using a Miller capacitor, center-frequency tuning can be achieved to compensate for process variation. A prototype was fabricated by 0.8μm N-well single-poly-triple-metal CMOS technology and occupies an area of 868.2×748.4μm2. Q value can vary from 3.4 to 629 and center frequency (fc) can vary from 687 to 830 MHz. For Q of 30 and fc of 829.6 MHz, the filter achieves a power gain of 2.0dB, a noise figure of 24.5dB, 1-dB compression point of -34dBm, input referred third-order intercept point of -22dBm, image rejection of 24.2dB, and power dissipation of 45.8 mW.

UR - https://www.scopus.com/pages/publications/0033363184

M3 - Conference article published in journal

AN - SCOPUS:0033363184

SN - 0149-645X

VL - 2

SP - 569

EP - 572

JO - IEEE MTT-S International Microwave Symposium Digest

JF - IEEE MTT-S International Microwave Symposium Digest

T2 - Proceedings of the 1999 IEEE MTT-S International Microwave Symposium Digest 'The Magic Touch of Microwaves'

Y2 - 13 June 1999 through 19 June 1999

ER -

2-V 0.8-μM CMOS monolithic RF filter for GSM receivers

Abstract

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