2000-Atmosphere Chip-Scale Packaged Bulk-Type Pressure Sensor with Dual-Cavity Induced Stress Amplification

Dequan Lin; Man Wong; Kevin Chau

doi:10.1109/Transducers50396.2021.9495537

2000-Atmosphere Chip-Scale Packaged Bulk-Type Pressure Sensor with Dual-Cavity Induced Stress Amplification

Dequan Lin, Man Wong, Kevin Chau

Department of Electronic and Computer Engineering

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

2 Citations (Scopus)

Abstract

Characterized up to a pressure of 200 MPa, a bulk-type single-cavity pressure sensor with a sensitivity of 79 VVMPa was previously reported. However, the capability of such a construction had not been fully realized since the pressure sensitivity was limited by the bulging of the surface on which the piezoresistive sensors were constructed. Presently reported is an improved dual-cavity design that incorporates a pressure sensing middle plate sandwiched between two vacuum-sealed cavities. Guided by finite-element analysis, the thickness of the sensing plate and the height of the cavities have been optimized. Over the same pressure range of 200 MPa, the new sensor exhibits a pressure sensitivity of 200\ VVMPa. This is 2.5× higher than that of the single-cavity design. In addition, a new chip-scale packaging scheme is proposed, providing silicon columns functioning as both electrical leads and stress-relieving structures.

Original language	English
Title of host publication	21st International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2021
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	70-73
Number of pages	4
ISBN (Electronic)	9781665412674
DOIs	https://doi.org/10.1109/Transducers50396.2021.9495537
Publication status	Published - 20 Jun 2021
Event	21st International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2021 - Virtual, Online, United States Duration: 20 Jun 2021 → 25 Jun 2021

Publication series

Name	21st International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2021

Conference

Conference	21st International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2021
Country/Territory	United States
City	Virtual, Online
Period	20/06/21 → 25/06/21

Bibliographical note

Publisher Copyright:
© 2021 IEEE.

Keywords

MEMS
Pressure
bulk
cavity
chip-scale package
flip-chip
piezoresistive
sensor
silicon
stress

Access to Document

10.1109/Transducers50396.2021.9495537

Cite this

Lin, D., Wong, M., & Chau, K. (2021). 2000-Atmosphere Chip-Scale Packaged Bulk-Type Pressure Sensor with Dual-Cavity Induced Stress Amplification. In 21st International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2021 (pp. 70-73). (21st International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2021). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/Transducers50396.2021.9495537

Lin, Dequan ; Wong, Man ; Chau, Kevin. / 2000-Atmosphere Chip-Scale Packaged Bulk-Type Pressure Sensor with Dual-Cavity Induced Stress Amplification. 21st International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2021. Institute of Electrical and Electronics Engineers Inc., 2021. pp. 70-73 (21st International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2021).

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abstract = "Characterized up to a pressure of 200 MPa, a bulk-type single-cavity pressure sensor with a sensitivity of 79 VVMPa was previously reported. However, the capability of such a construction had not been fully realized since the pressure sensitivity was limited by the bulging of the surface on which the piezoresistive sensors were constructed. Presently reported is an improved dual-cavity design that incorporates a pressure sensing middle plate sandwiched between two vacuum-sealed cavities. Guided by finite-element analysis, the thickness of the sensing plate and the height of the cavities have been optimized. Over the same pressure range of 200 MPa, the new sensor exhibits a pressure sensitivity of 200\textbackslash{} VVMPa. This is 2.5× higher than that of the single-cavity design. In addition, a new chip-scale packaging scheme is proposed, providing silicon columns functioning as both electrical leads and stress-relieving structures.",

keywords = "MEMS, Pressure, bulk, cavity, chip-scale package, flip-chip, piezoresistive, sensor, silicon, stress",

author = "Dequan Lin and Man Wong and Kevin Chau",

note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 21st International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2021 ; Conference date: 20-06-2021 Through 25-06-2021",

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Lin, D, Wong, M & Chau, K 2021, 2000-Atmosphere Chip-Scale Packaged Bulk-Type Pressure Sensor with Dual-Cavity Induced Stress Amplification. in 21st International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2021. 21st International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2021, Institute of Electrical and Electronics Engineers Inc., pp. 70-73, 21st International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2021, Virtual, Online, United States, 20/06/21. https://doi.org/10.1109/Transducers50396.2021.9495537

2000-Atmosphere Chip-Scale Packaged Bulk-Type Pressure Sensor with Dual-Cavity Induced Stress Amplification. / Lin, Dequan; Wong, Man; Chau, Kevin.
21st International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2021. Institute of Electrical and Electronics Engineers Inc., 2021. p. 70-73 (21st International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2021).

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

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T1 - 2000-Atmosphere Chip-Scale Packaged Bulk-Type Pressure Sensor with Dual-Cavity Induced Stress Amplification

AU - Lin, Dequan

AU - Wong, Man

AU - Chau, Kevin

PY - 2021/6/20

Y1 - 2021/6/20

N2 - Characterized up to a pressure of 200 MPa, a bulk-type single-cavity pressure sensor with a sensitivity of 79 VVMPa was previously reported. However, the capability of such a construction had not been fully realized since the pressure sensitivity was limited by the bulging of the surface on which the piezoresistive sensors were constructed. Presently reported is an improved dual-cavity design that incorporates a pressure sensing middle plate sandwiched between two vacuum-sealed cavities. Guided by finite-element analysis, the thickness of the sensing plate and the height of the cavities have been optimized. Over the same pressure range of 200 MPa, the new sensor exhibits a pressure sensitivity of 200\ VVMPa. This is 2.5× higher than that of the single-cavity design. In addition, a new chip-scale packaging scheme is proposed, providing silicon columns functioning as both electrical leads and stress-relieving structures.

AB - Characterized up to a pressure of 200 MPa, a bulk-type single-cavity pressure sensor with a sensitivity of 79 VVMPa was previously reported. However, the capability of such a construction had not been fully realized since the pressure sensitivity was limited by the bulging of the surface on which the piezoresistive sensors were constructed. Presently reported is an improved dual-cavity design that incorporates a pressure sensing middle plate sandwiched between two vacuum-sealed cavities. Guided by finite-element analysis, the thickness of the sensing plate and the height of the cavities have been optimized. Over the same pressure range of 200 MPa, the new sensor exhibits a pressure sensitivity of 200\ VVMPa. This is 2.5× higher than that of the single-cavity design. In addition, a new chip-scale packaging scheme is proposed, providing silicon columns functioning as both electrical leads and stress-relieving structures.

KW - MEMS

KW - Pressure

KW - bulk

KW - cavity

KW - chip-scale package

KW - flip-chip

KW - piezoresistive

KW - sensor

KW - silicon

KW - stress

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DO - 10.1109/Transducers50396.2021.9495537

M3 - Conference Paper published in a book

T3 - 21st International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2021

SP - 70

EP - 73

BT - 21st International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2021

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 21st International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2021

Y2 - 20 June 2021 through 25 June 2021

ER -

Lin D, Wong M, Chau K. 2000-Atmosphere Chip-Scale Packaged Bulk-Type Pressure Sensor with Dual-Cavity Induced Stress Amplification. In 21st International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2021. Institute of Electrical and Electronics Engineers Inc. 2021. p. 70-73. (21st International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2021). doi: 10.1109/Transducers50396.2021.9495537

2000-Atmosphere Chip-Scale Packaged Bulk-Type Pressure Sensor with Dual-Cavity Induced Stress Amplification

Abstract

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Bibliographical note

Keywords

Access to Document

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