TY - GEN
T1 - 2DEG electron bolometric mixers
T2 - Proceedings of the 17th International Conference on Infrared and Millimeter Waves
AU - Yang, J. X.
AU - Agahi, F.
AU - Dai, D.
AU - Musante, C.
AU - Grammer, W.
AU - Lau, K. M.
AU - Yngvesson, K. S.
PY - 1992
Y1 - 1992
N2 - While SIS and Schottky barrier mixers have demonstrated decreasing receiver noise temperatures up to 500 GHz in the last few years, there is still a lack of very low noise receivers above that frequency. The 2DEG device, which the authors have developed, is based on the same material combination which is used in HFETs, i. e. a heterojunction between AlGaAs and GaAs. The layers which form the heterojunction are grown by OMCVD. Devices are etched as mesas, with standard ohmic contacts. Typical dimensions of the active region are a length of 5-10 microns, and width of 50-100 microns.
AB - While SIS and Schottky barrier mixers have demonstrated decreasing receiver noise temperatures up to 500 GHz in the last few years, there is still a lack of very low noise receivers above that frequency. The 2DEG device, which the authors have developed, is based on the same material combination which is used in HFETs, i. e. a heterojunction between AlGaAs and GaAs. The layers which form the heterojunction are grown by OMCVD. Devices are etched as mesas, with standard ohmic contacts. Typical dimensions of the active region are a length of 5-10 microns, and width of 50-100 microns.
UR - https://www.scopus.com/pages/publications/0026965350
M3 - Conference Paper published in a book
AN - SCOPUS:0026965350
SN - 0819411639
T3 - Proceedings of SPIE - The International Society for Optical Engineering
SP - 208
EP - 209
BT - Proceedings of SPIE - The International Society for Optical Engineering
PB - Publ by Society of Photo-Optical Instrumentation Engineers
Y2 - 14 December 1992 through 17 December 1992
ER -