Skip to main navigation Skip to search Skip to main content

3.0 kV β-Ga2O3-Based Vertical p-n Heterojunction Diodes With Helium- Implanted Edge Termination

Jiajun Han, Na Sun, Xinyi Pei, Rui Wang, Kangkai Fan, Renqiang Zhu, Min Wang, Xi Zhu, Xiaohua Li, Jingbo Li, Nengjie Huo, Jiandong Ye, Xinke Liu*

*Corresponding author for this work

Research output: Contribution to journalJournal Articlepeer-review

Fingerprint

Dive into the research topics of '3.0 kV β-Ga2O3-Based Vertical p-n Heterojunction Diodes With Helium- Implanted Edge Termination'. Together they form a unique fingerprint.
Sort by

Material Science