650-V GaN-on-Si Power Integration Platform Using Virtual-Body p-GaN Gate HEMT to Screen Substrate-Induced Crosstalk

Junjie Yang; Jin Wei; Maojun Wang; Muqin Nuo; Han Yang; Teng Li; Jingjing Yu; Xuelin Yang; Yilong Hao; Jinyan Wang; Bo Shen

doi:10.1109/IEDM45741.2023.10413679

650-V GaN-on-Si Power Integration Platform Using Virtual-Body p-GaN Gate HEMT to Screen Substrate-Induced Crosstalk

Junjie Yang, Jin Wei^*, Maojun Wang^*, Muqin Nuo, Han Yang, Teng Li, Jingjing Yu, Xuelin Yang, Yilong Hao, Jinyan Wang, Bo Shen^*

^*Corresponding author for this work

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

8 Citations (Scopus)

Abstract

A 650-V GaN-on-Si power integration platform based on virtual-body p-GaN gate HEMT (VB-HEMT) is demonstrated for monolithically integrated half-bridge circuit. The platform adopts a standard low-resistivity bulk Si substrate, enabling epitaxial growth of thick GaN films using the established GaN-on-Si technology, thus boosting the GaN-on-Si power IC platform to 650 V level. The VB-HEMT features a virtual body at the interface between GaN channel layer and buried AlGaN layer. The holes injected from the p-GaN gate accumulate and spread along the virtual body, providing an effective screening against substructure-induced crosstalk up to 400 V. Furthermore, the dynamic R_ON of the VB-HEMT is appreciably reduced.

Original language	English
Title of host publication	2023 International Electron Devices Meeting, IEDM 2023
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9798350327670
DOIs	https://doi.org/10.1109/IEDM45741.2023.10413679
Publication status	Published - 2023
Externally published	Yes
Event	2023 International Electron Devices Meeting, IEDM 2023 - San Francisco, United States Duration: 9 Dec 2023 → 13 Dec 2023

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	2023 International Electron Devices Meeting, IEDM 2023
Country/Territory	United States
City	San Francisco
Period	9/12/23 → 13/12/23

Bibliographical note

Publisher Copyright:
© 2023 IEEE.

Access to Document

10.1109/IEDM45741.2023.10413679

Cite this

Yang, J., Wei, J., Wang, M., Nuo, M., Yang, H., Li, T., Yu, J., Yang, X., Hao, Y., Wang, J., & Shen, B. (2023). 650-V GaN-on-Si Power Integration Platform Using Virtual-Body p-GaN Gate HEMT to Screen Substrate-Induced Crosstalk. In 2023 International Electron Devices Meeting, IEDM 2023 (Technical Digest - International Electron Devices Meeting, IEDM). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM45741.2023.10413679

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title = "650-V GaN-on-Si Power Integration Platform Using Virtual-Body p-GaN Gate HEMT to Screen Substrate-Induced Crosstalk",

abstract = "A 650-V GaN-on-Si power integration platform based on virtual-body p-GaN gate HEMT (VB-HEMT) is demonstrated for monolithically integrated half-bridge circuit. The platform adopts a standard low-resistivity bulk Si substrate, enabling epitaxial growth of thick GaN films using the established GaN-on-Si technology, thus boosting the GaN-on-Si power IC platform to 650 V level. The VB-HEMT features a virtual body at the interface between GaN channel layer and buried AlGaN layer. The holes injected from the p-GaN gate accumulate and spread along the virtual body, providing an effective screening against substructure-induced crosstalk up to 400 V. Furthermore, the dynamic RON of the VB-HEMT is appreciably reduced.",

author = "Junjie Yang and Jin Wei and Maojun Wang and Muqin Nuo and Han Yang and Teng Li and Jingjing Yu and Xuelin Yang and Yilong Hao and Jinyan Wang and Bo Shen",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 International Electron Devices Meeting, IEDM 2023 ; Conference date: 09-12-2023 Through 13-12-2023",

year = "2023",

doi = "10.1109/IEDM45741.2023.10413679",

language = "English",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Yang, J, Wei, J, Wang, M, Nuo, M, Yang, H, Li, T, Yu, J, Yang, X, Hao, Y, Wang, J & Shen, B 2023, 650-V GaN-on-Si Power Integration Platform Using Virtual-Body p-GaN Gate HEMT to Screen Substrate-Induced Crosstalk. in 2023 International Electron Devices Meeting, IEDM 2023. Technical Digest - International Electron Devices Meeting, IEDM, Institute of Electrical and Electronics Engineers Inc., 2023 International Electron Devices Meeting, IEDM 2023, San Francisco, United States, 9/12/23. https://doi.org/10.1109/IEDM45741.2023.10413679

650-V GaN-on-Si Power Integration Platform Using Virtual-Body p-GaN Gate HEMT to Screen Substrate-Induced Crosstalk. / Yang, Junjie; Wei, Jin; Wang, Maojun et al.
2023 International Electron Devices Meeting, IEDM 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

TY - GEN

T1 - 650-V GaN-on-Si Power Integration Platform Using Virtual-Body p-GaN Gate HEMT to Screen Substrate-Induced Crosstalk

AU - Yang, Junjie

AU - Wei, Jin

AU - Wang, Maojun

AU - Nuo, Muqin

AU - Yang, Han

AU - Li, Teng

AU - Yu, Jingjing

AU - Yang, Xuelin

AU - Hao, Yilong

AU - Wang, Jinyan

AU - Shen, Bo

PY - 2023

Y1 - 2023

N2 - A 650-V GaN-on-Si power integration platform based on virtual-body p-GaN gate HEMT (VB-HEMT) is demonstrated for monolithically integrated half-bridge circuit. The platform adopts a standard low-resistivity bulk Si substrate, enabling epitaxial growth of thick GaN films using the established GaN-on-Si technology, thus boosting the GaN-on-Si power IC platform to 650 V level. The VB-HEMT features a virtual body at the interface between GaN channel layer and buried AlGaN layer. The holes injected from the p-GaN gate accumulate and spread along the virtual body, providing an effective screening against substructure-induced crosstalk up to 400 V. Furthermore, the dynamic RON of the VB-HEMT is appreciably reduced.

AB - A 650-V GaN-on-Si power integration platform based on virtual-body p-GaN gate HEMT (VB-HEMT) is demonstrated for monolithically integrated half-bridge circuit. The platform adopts a standard low-resistivity bulk Si substrate, enabling epitaxial growth of thick GaN films using the established GaN-on-Si technology, thus boosting the GaN-on-Si power IC platform to 650 V level. The VB-HEMT features a virtual body at the interface between GaN channel layer and buried AlGaN layer. The holes injected from the p-GaN gate accumulate and spread along the virtual body, providing an effective screening against substructure-induced crosstalk up to 400 V. Furthermore, the dynamic RON of the VB-HEMT is appreciably reduced.

UR - https://www.scopus.com/pages/publications/85185604911

U2 - 10.1109/IEDM45741.2023.10413679

DO - 10.1109/IEDM45741.2023.10413679

M3 - Conference Paper published in a book

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BT - 2023 International Electron Devices Meeting, IEDM 2023

PB - Institute of Electrical and Electronics Engineers Inc.

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ER -

Yang J, Wei J, Wang M, Nuo M, Yang H, Li T et al. 650-V GaN-on-Si Power Integration Platform Using Virtual-Body p-GaN Gate HEMT to Screen Substrate-Induced Crosstalk. In 2023 International Electron Devices Meeting, IEDM 2023. Institute of Electrical and Electronics Engineers Inc. 2023. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM45741.2023.10413679

650-V GaN-on-Si Power Integration Platform Using Virtual-Body p-GaN Gate HEMT to Screen Substrate-Induced Crosstalk

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