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750MS/S NMOS LATCHED COMPARATOR.

  • David C. Soo*
  • , Alexander M. Voshchenkov
  • , Gen M. Chin
  • , Vance D. Archer
  • , Maureen Lau
  • , Mark Morris
  • , Ping K. Ko
  • , Robert G. Meyer
  • , Bruce A. Wooley
  • *Corresponding author for this work

Research output: Contribution to journalConference article published in journalpeer-review

Abstract

Summary form only given. The design of analog circuits integrated in a polysilicon gate NMOS technology with 1 mu m effective channel length devices is described. In particular, a latched comparator with 4-b input resolution at 750 MS/s and a wideband amplifier with 10 dB of voltage gain over a bandwidth of 1. 25 GHz, when driving 130 fF of on-chip capacitance, are reported. The comparator was designed primarily for application to high-speed flash A/D conversion, but is also suitable for use in integrated broadband fiber-optic receivers. Its circuit configuration differs from previous designs in that negative feedback is used in the preamplifier section to trade gain for bandwidth.

Original languageEnglish
Pages (from-to)146-147, 327
JournalDigest of Technical Papers - IEEE International Solid-State Circuits Conference
Publication statusPublished - 1985
Externally publishedYes

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