A 157.8-166.3 GHz Fundamental Oscillator Achieving -181.9 dBc/Hz FoM in 65 nm CMOS

Xiaolong Liu; Howard C. Luong

doi:10.1109/TTHZ.2022.3229663

A 157.8-166.3 GHz Fundamental Oscillator Achieving -181.9 dBc/Hz FoM in 65 nm CMOS

Xiaolong Liu^*, Howard C. Luong

^*Corresponding author for this work

Department of Electronic and Computer Engineering

Research output: Contribution to journal › Journal Article › peer-review

2 Citations (Scopus)

Abstract

This letter presents a sub-terahertz fundamental oscillator using a magnetic tuning technique and drain-to-source transformer feedback to extend the tuning range and enhance the output power. Realized in a 65-nm CMOS process, the proposed prototype operates above fmax/2 and achieves a frequency tuning range from 157.8 to 166.3 GHz with a phase noise of -105 dBc/Hz at 10-MHz offset, a dc-to-RF efficiency of 2.1%, and a power consumption of 5.6 mW, corresponding to an figure of merit (FoM) of -181.9 dBc/Hz.

Original language	English
Pages (from-to)	93-97
Number of pages	5
Journal	IEEE Transactions on Terahertz Science and Technology
Volume	13
Issue number	1
DOIs	https://doi.org/10.1109/TTHZ.2022.3229663
Publication status	Published - 1 Jan 2023

Bibliographical note

Publisher Copyright:
© 2011-2012 IEEE.

Keywords

Fundamental oscillator
magnetic tuning
phase noise
sub-terahertz (sub-THz)
transformer feedback
tuning range

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10.1109/TTHZ.2022.3229663

Cite this

@article{981a06ff13e64974a703f51a62dbed03,

title = "A 157.8-166.3 GHz Fundamental Oscillator Achieving -181.9 dBc/Hz FoM in 65 nm CMOS",

abstract = "This letter presents a sub-terahertz fundamental oscillator using a magnetic tuning technique and drain-to-source transformer feedback to extend the tuning range and enhance the output power. Realized in a 65-nm CMOS process, the proposed prototype operates above fmax/2 and achieves a frequency tuning range from 157.8 to 166.3 GHz with a phase noise of -105 dBc/Hz at 10-MHz offset, a dc-to-RF efficiency of 2.1\%, and a power consumption of 5.6 mW, corresponding to an figure of merit (FoM) of -181.9 dBc/Hz.",

keywords = "Fundamental oscillator, magnetic tuning, phase noise, sub-terahertz (sub-THz), transformer feedback, tuning range",

author = "Xiaolong Liu and Luong, \{Howard C.\}",

note = "Publisher Copyright: {\textcopyright} 2011-2012 IEEE.",

year = "2023",

month = jan,

day = "1",

doi = "10.1109/TTHZ.2022.3229663",

language = "English",

volume = "13",

pages = "93--97",

journal = "IEEE Transactions on Terahertz Science and Technology",

issn = "2156-342X",

publisher = "IEEE Microwave Theory and Techniques Society",

number = "1",

}

TY - JOUR

T1 - A 157.8-166.3 GHz Fundamental Oscillator Achieving -181.9 dBc/Hz FoM in 65 nm CMOS

AU - Liu, Xiaolong

AU - Luong, Howard C.

PY - 2023/1/1

Y1 - 2023/1/1

N2 - This letter presents a sub-terahertz fundamental oscillator using a magnetic tuning technique and drain-to-source transformer feedback to extend the tuning range and enhance the output power. Realized in a 65-nm CMOS process, the proposed prototype operates above fmax/2 and achieves a frequency tuning range from 157.8 to 166.3 GHz with a phase noise of -105 dBc/Hz at 10-MHz offset, a dc-to-RF efficiency of 2.1%, and a power consumption of 5.6 mW, corresponding to an figure of merit (FoM) of -181.9 dBc/Hz.

AB - This letter presents a sub-terahertz fundamental oscillator using a magnetic tuning technique and drain-to-source transformer feedback to extend the tuning range and enhance the output power. Realized in a 65-nm CMOS process, the proposed prototype operates above fmax/2 and achieves a frequency tuning range from 157.8 to 166.3 GHz with a phase noise of -105 dBc/Hz at 10-MHz offset, a dc-to-RF efficiency of 2.1%, and a power consumption of 5.6 mW, corresponding to an figure of merit (FoM) of -181.9 dBc/Hz.

KW - Fundamental oscillator

KW - magnetic tuning

KW - phase noise

KW - sub-terahertz (sub-THz)

KW - transformer feedback

KW - tuning range

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:000920767700013

UR - https://openalex.org/W4313149147

UR - https://www.scopus.com/pages/publications/85146217948

U2 - 10.1109/TTHZ.2022.3229663

DO - 10.1109/TTHZ.2022.3229663

M3 - Journal Article

SN - 2156-342X

VL - 13

SP - 93

EP - 97

JO - IEEE Transactions on Terahertz Science and Technology

JF - IEEE Transactions on Terahertz Science and Technology

IS - 1

ER -

A 157.8-166.3 GHz Fundamental Oscillator Achieving -181.9 dBc/Hz FoM in 65 nm CMOS

Abstract

Bibliographical note

Keywords

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