A 600-V, 10-A trench bipolar junction diode with superior static and dynamic characteristics

Budong You; Alex Q. Huang; Johnny K.O. Sin

doi:10.1109/16.944208

A 600-V, 10-A trench bipolar junction diode with superior static and dynamic characteristics

Budong You^*, Alex Q. Huang, Johnny K.O. Sin

^*Corresponding author for this work

Department of Electronic and Computer Engineering

Research output: Contribution to journal › Journal Article › peer-review

3 Citations (Scopus)

Abstract

In this paper, 600-V, 10-A trench bipolar junction diodes (TBJDs) fabricated utilizing a new self-aligned trench process is characterized and reported. For the first time, the TBJD has experimentally demonstrated, compared to the conventional P-i-N diode, not only superior reverse recovery characteristics, but also lower on-state voltage drops and the unchanged reverse leakage current levels at elevated temperature. The relationship between the diode performance and the design parameters of the TBJD is also discussed in this paper.

Original language	English
Pages (from-to)	2143-2147
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	48
Issue number	9
DOIs	https://doi.org/10.1109/16.944208
Publication status	Published - Sept 2001

Keywords

Bipolar transistors
Polycrystalline silicon
Power diodes
Semiconductor device fabrication
Trench etching

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10.1109/16.944208

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title = "A 600-V, 10-A trench bipolar junction diode with superior static and dynamic characteristics",

abstract = "In this paper, 600-V, 10-A trench bipolar junction diodes (TBJDs) fabricated utilizing a new self-aligned trench process is characterized and reported. For the first time, the TBJD has experimentally demonstrated, compared to the conventional P-i-N diode, not only superior reverse recovery characteristics, but also lower on-state voltage drops and the unchanged reverse leakage current levels at elevated temperature. The relationship between the diode performance and the design parameters of the TBJD is also discussed in this paper.",

keywords = "Bipolar transistors, Polycrystalline silicon, Power diodes, Semiconductor device fabrication, Trench etching",

author = "Budong You and Huang, \{Alex Q.\} and Sin, \{Johnny K.O.\}",

year = "2001",

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doi = "10.1109/16.944208",

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T1 - A 600-V, 10-A trench bipolar junction diode with superior static and dynamic characteristics

AU - You, Budong

AU - Huang, Alex Q.

AU - Sin, Johnny K.O.

PY - 2001/9

Y1 - 2001/9

N2 - In this paper, 600-V, 10-A trench bipolar junction diodes (TBJDs) fabricated utilizing a new self-aligned trench process is characterized and reported. For the first time, the TBJD has experimentally demonstrated, compared to the conventional P-i-N diode, not only superior reverse recovery characteristics, but also lower on-state voltage drops and the unchanged reverse leakage current levels at elevated temperature. The relationship between the diode performance and the design parameters of the TBJD is also discussed in this paper.

AB - In this paper, 600-V, 10-A trench bipolar junction diodes (TBJDs) fabricated utilizing a new self-aligned trench process is characterized and reported. For the first time, the TBJD has experimentally demonstrated, compared to the conventional P-i-N diode, not only superior reverse recovery characteristics, but also lower on-state voltage drops and the unchanged reverse leakage current levels at elevated temperature. The relationship between the diode performance and the design parameters of the TBJD is also discussed in this paper.

KW - Bipolar transistors

KW - Polycrystalline silicon

KW - Power diodes

KW - Semiconductor device fabrication

KW - Trench etching

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:000170644100041

UR - https://openalex.org/W2141321274

UR - https://www.scopus.com/pages/publications/0035446265

U2 - 10.1109/16.944208

DO - 10.1109/16.944208

M3 - Journal Article

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VL - 48

SP - 2143

EP - 2147

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 9

ER -

A 600-V, 10-A trench bipolar junction diode with superior static and dynamic characteristics

Abstract

Keywords

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