A charge-based model for long-channel cylindrical surrounding-gate MOSFETs from intrinsic channel to heavily doped body

Feng Liu; Jin He; Lining Zhang; Jian Zhang; Jinghua Hu; Chenyue Ma; Mansun Chan

doi:10.1109/TED.2008.926735

A charge-based model for long-channel cylindrical surrounding-gate MOSFETs from intrinsic channel to heavily doped body

Feng Liu^*, Jin He, Lining Zhang, Jian Zhang, Jinghua Hu, Chenyue Ma, Mansun Chan

^*Corresponding author for this work

Department of Electronic and Computer Engineering

Research output: Contribution to journal › Journal Article › peer-review

77 Citations (Scopus)

Abstract

A charge-based model is presented for long-channel cylindrical surrounding-gate (SRG) MOSFETs from an intrinsic channel to a heavily doped body. The model derivation is based on an accurate inversion charge solution of Poisson's equation in a cylindrical coordinate system. The general drain-current equation is obtained from Pao-Sah's dual integral, which is expressed as a function of inversion charge at the source and drain terminals. The model is valid for all regions of operation without employing any smoothing function. The model has been extensively verified by numerical simulations with a wide range of SRG MOSFET geometry parameters and channel doping concentrations, including the undoped channel.

Original language	English
Pages (from-to)	2187-2194
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	55
Issue number	8
DOIs	https://doi.org/10.1109/TED.2008.926735
Publication status	Published - 2008

Keywords

Compact model
Device physics
Doping concentration
Drain current
Surrounding-gate (SRG) MOSFET

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10.1109/TED.2008.926735

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title = "A charge-based model for long-channel cylindrical surrounding-gate MOSFETs from intrinsic channel to heavily doped body",

abstract = "A charge-based model is presented for long-channel cylindrical surrounding-gate (SRG) MOSFETs from an intrinsic channel to a heavily doped body. The model derivation is based on an accurate inversion charge solution of Poisson's equation in a cylindrical coordinate system. The general drain-current equation is obtained from Pao-Sah's dual integral, which is expressed as a function of inversion charge at the source and drain terminals. The model is valid for all regions of operation without employing any smoothing function. The model has been extensively verified by numerical simulations with a wide range of SRG MOSFET geometry parameters and channel doping concentrations, including the undoped channel.",

keywords = "Compact model, Device physics, Doping concentration, Drain current, Surrounding-gate (SRG) MOSFET",

author = "Feng Liu and Jin He and Lining Zhang and Jian Zhang and Jinghua Hu and Chenyue Ma and Mansun Chan",

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T1 - A charge-based model for long-channel cylindrical surrounding-gate MOSFETs from intrinsic channel to heavily doped body

AU - Liu, Feng

AU - He, Jin

AU - Zhang, Lining

AU - Zhang, Jian

AU - Hu, Jinghua

AU - Ma, Chenyue

AU - Chan, Mansun

PY - 2008

Y1 - 2008

N2 - A charge-based model is presented for long-channel cylindrical surrounding-gate (SRG) MOSFETs from an intrinsic channel to a heavily doped body. The model derivation is based on an accurate inversion charge solution of Poisson's equation in a cylindrical coordinate system. The general drain-current equation is obtained from Pao-Sah's dual integral, which is expressed as a function of inversion charge at the source and drain terminals. The model is valid for all regions of operation without employing any smoothing function. The model has been extensively verified by numerical simulations with a wide range of SRG MOSFET geometry parameters and channel doping concentrations, including the undoped channel.

AB - A charge-based model is presented for long-channel cylindrical surrounding-gate (SRG) MOSFETs from an intrinsic channel to a heavily doped body. The model derivation is based on an accurate inversion charge solution of Poisson's equation in a cylindrical coordinate system. The general drain-current equation is obtained from Pao-Sah's dual integral, which is expressed as a function of inversion charge at the source and drain terminals. The model is valid for all regions of operation without employing any smoothing function. The model has been extensively verified by numerical simulations with a wide range of SRG MOSFET geometry parameters and channel doping concentrations, including the undoped channel.

KW - Compact model

KW - Device physics

KW - Doping concentration

KW - Drain current

KW - Surrounding-gate (SRG) MOSFET

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UR - https://www.scopus.com/pages/publications/49249128094

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DO - 10.1109/TED.2008.926735

M3 - Journal Article

SN - 0018-9383

VL - 55

SP - 2187

EP - 2194

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 8

ER -

A charge-based model for long-channel cylindrical surrounding-gate MOSFETs from intrinsic channel to heavily doped body

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Keywords

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