A CMOS-compatible WORM memory for low-cost non-volatile memory applications

Randy Barsatan; Tsz Yin Man; Mansun Chan

doi:10.1109/EDSSC.2005.1635276

A CMOS-compatible WORM memory for low-cost non-volatile memory applications

Randy Barsatan, Tsz Yin Man, Mansun Chan

Department of Electronic and Computer Engineering

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

3 Citations (Scopus)

Abstract

A Write-Once-Read-Many (WORM) memory using a CMOS-compatible Antifuse (AF) element for low-cost nonvolatile memory is presented. The AF device is formed on an NMOS with PLDD implants (MOS-channel AF) to enhance hot-carrier effects. The AF is programmed by applying a high voltage across the channel until breakdown such that it becomes resistor. The devices were fabricated in standard TSMC 0.18μm process without any process modification. The channel breakdown was observed between 4.5V to 5V. The programmed resistance is in the kΩ range at miiliampere range of programming current. A 128-bit WORM architecture is presented based on an IO-select transistor and the AF memory cell. The architecture was designed and simulated in Cadence to verify the functionality of the device when formed in an array.

Original language	English
Title of host publication	2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	339-342
Number of pages	4
ISBN (Print)	0780393392, 9780780393394
DOIs	https://doi.org/10.1109/EDSSC.2005.1635276
Publication status	Published - 2005
Event	2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC - Howloon, Hong Kong Duration: 19 Dec 2005 → 21 Dec 2005

Publication series

Name	2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC

Conference

Conference	2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
Country/Territory	Hong Kong
City	Howloon
Period	19/12/05 → 21/12/05

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10.1109/EDSSC.2005.1635276

Cite this

Barsatan, R., Man, T. Y., & Chan, M. (2005). A CMOS-compatible WORM memory for low-cost non-volatile memory applications. In 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC (pp. 339-342). Article 1635276 (2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDSSC.2005.1635276

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title = "A CMOS-compatible WORM memory for low-cost non-volatile memory applications",

abstract = "A Write-Once-Read-Many (WORM) memory using a CMOS-compatible Antifuse (AF) element for low-cost nonvolatile memory is presented. The AF device is formed on an NMOS with PLDD implants (MOS-channel AF) to enhance hot-carrier effects. The AF is programmed by applying a high voltage across the channel until breakdown such that it becomes resistor. The devices were fabricated in standard TSMC 0.18μm process without any process modification. The channel breakdown was observed between 4.5V to 5V. The programmed resistance is in the kΩ range at miiliampere range of programming current. A 128-bit WORM architecture is presented based on an IO-select transistor and the AF memory cell. The architecture was designed and simulated in Cadence to verify the functionality of the device when formed in an array.",

author = "Randy Barsatan and Man, \{Tsz Yin\} and Mansun Chan",

year = "2005",

doi = "10.1109/EDSSC.2005.1635276",

language = "English",

isbn = "0780393392",

series = "2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "339--342",

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note = "2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC ; Conference date: 19-12-2005 Through 21-12-2005",

}

Barsatan, R, Man, TY & Chan, M 2005, A CMOS-compatible WORM memory for low-cost non-volatile memory applications. in 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC., 1635276, 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC, Institute of Electrical and Electronics Engineers Inc., pp. 339-342, 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC, Howloon, Hong Kong, 19/12/05. https://doi.org/10.1109/EDSSC.2005.1635276

A CMOS-compatible WORM memory for low-cost non-volatile memory applications. / Barsatan, Randy; Man, Tsz Yin; Chan, Mansun.
2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC. Institute of Electrical and Electronics Engineers Inc., 2005. p. 339-342 1635276 (2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC).

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

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Barsatan R, Man TY, Chan M. A CMOS-compatible WORM memory for low-cost non-volatile memory applications. In 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC. Institute of Electrical and Electronics Engineers Inc. 2005. p. 339-342. 1635276. (2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC). doi: 10.1109/EDSSC.2005.1635276

A CMOS-compatible WORM memory for low-cost non-volatile memory applications

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