A comparative study of the effect of dynamic stressing on high-field endurance and stability of reoxidized-nitrided, fluorinated and conventional oxides

Z. H. Liu; E. Rosenbaum; P. K. Ko; C. Hu; Y. C. Cheng; C. G. Sodini; B. J. Gross; T. P. Ma

doi:10.1109/IEDM.1991.235321

A comparative study of the effect of dynamic stressing on high-field endurance and stability of reoxidized-nitrided, fluorinated and conventional oxides

Z. H. Liu, E. Rosenbaum, P. K. Ko, C. Hu, Y. C. Cheng, C. G. Sodini, B. J. Gross, T. P. Ma

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

5 Citations (Scopus)

Abstract

High field endurances of reoxidized-nitrided oxide (RNO), and fluorinated oxide (FOX) under dynamic Fowler-Nordheim stress were compared with that of conventional oxide. Time-dependent dielectric breakdown (TDDB) of RNO and FOX is shown to be strongly dependent on frequency, and lifetime under high frequency stress is longer than that under DC stress. RNO and FOX display interface hardness under high field injection at all frequencies. Interface trap generation is not a strong function of frequency in any of the oxides studied. Examination of charge trapping indicates that frequency-dependent hole trapping is responsible for the frequency dependence of TDDB.

Original language	English
Title of host publication	International Electron Devices Meeting 1991, IEDM 1991
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	723-726
Number of pages	4
ISBN (Electronic)	0780302435
DOIs	https://doi.org/10.1109/IEDM.1991.235321
Publication status	Published - 1991
Externally published	Yes
Event	International Electron Devices Meeting, IEDM 1991 - Washington, United States Duration: 8 Dec 1991 → 11 Dec 1991

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	1991-January
ISSN (Print)	0163-1918

Conference

Conference	International Electron Devices Meeting, IEDM 1991
Country/Territory	United States
City	Washington
Period	8/12/91 → 11/12/91

Bibliographical note

Publisher Copyright:
© 1991 IEEE.

Keywords

Annealing
Breakdown voltage
Capacitance-voltage characteristics
Current measurement
Electric breakdown
Frequency dependence
Impact ionization
Monitoring
Stability
Stress

Access to Document

10.1109/IEDM.1991.235321

Cite this

Liu, Z. H., Rosenbaum, E., Ko, P. K., Hu, C., Cheng, Y. C., Sodini, C. G., Gross, B. J., & Ma, T. P. (1991). A comparative study of the effect of dynamic stressing on high-field endurance and stability of reoxidized-nitrided, fluorinated and conventional oxides. In International Electron Devices Meeting 1991, IEDM 1991 (pp. 723-726). Article 235321 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 1991-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.1991.235321

Liu, Z. H. ; Rosenbaum, E. ; Ko, P. K. et al. / A comparative study of the effect of dynamic stressing on high-field endurance and stability of reoxidized-nitrided, fluorinated and conventional oxides. International Electron Devices Meeting 1991, IEDM 1991. Institute of Electrical and Electronics Engineers Inc., 1991. pp. 723-726 (Technical Digest - International Electron Devices Meeting, IEDM).

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title = "A comparative study of the effect of dynamic stressing on high-field endurance and stability of reoxidized-nitrided, fluorinated and conventional oxides",

abstract = "High field endurances of reoxidized-nitrided oxide (RNO), and fluorinated oxide (FOX) under dynamic Fowler-Nordheim stress were compared with that of conventional oxide. Time-dependent dielectric breakdown (TDDB) of RNO and FOX is shown to be strongly dependent on frequency, and lifetime under high frequency stress is longer than that under DC stress. RNO and FOX display interface hardness under high field injection at all frequencies. Interface trap generation is not a strong function of frequency in any of the oxides studied. Examination of charge trapping indicates that frequency-dependent hole trapping is responsible for the frequency dependence of TDDB.",

keywords = "Annealing, Breakdown voltage, Capacitance-voltage characteristics, Current measurement, Electric breakdown, Frequency dependence, Impact ionization, Monitoring, Stability, Stress",

author = "Liu, \{Z. H.\} and E. Rosenbaum and Ko, \{P. K.\} and C. Hu and Cheng, \{Y. C.\} and Sodini, \{C. G.\} and Gross, \{B. J.\} and Ma, \{T. P.\}",

note = "Publisher Copyright: {\textcopyright} 1991 IEEE.; International Electron Devices Meeting, IEDM 1991 ; Conference date: 08-12-1991 Through 11-12-1991",

year = "1991",

doi = "10.1109/IEDM.1991.235321",

language = "English",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "723--726",

booktitle = "International Electron Devices Meeting 1991, IEDM 1991",

}

Liu, ZH, Rosenbaum, E, Ko, PK, Hu, C, Cheng, YC, Sodini, CG, Gross, BJ & Ma, TP 1991, A comparative study of the effect of dynamic stressing on high-field endurance and stability of reoxidized-nitrided, fluorinated and conventional oxides. in International Electron Devices Meeting 1991, IEDM 1991., 235321, Technical Digest - International Electron Devices Meeting, IEDM, vol. 1991-January, Institute of Electrical and Electronics Engineers Inc., pp. 723-726, International Electron Devices Meeting, IEDM 1991, Washington, United States, 8/12/91. https://doi.org/10.1109/IEDM.1991.235321

A comparative study of the effect of dynamic stressing on high-field endurance and stability of reoxidized-nitrided, fluorinated and conventional oxides. / Liu, Z. H.; Rosenbaum, E.; Ko, P. K. et al.
International Electron Devices Meeting 1991, IEDM 1991. Institute of Electrical and Electronics Engineers Inc., 1991. p. 723-726 235321 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 1991-January).

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

TY - GEN

T1 - A comparative study of the effect of dynamic stressing on high-field endurance and stability of reoxidized-nitrided, fluorinated and conventional oxides

AU - Liu, Z. H.

AU - Rosenbaum, E.

AU - Ko, P. K.

AU - Hu, C.

AU - Cheng, Y. C.

AU - Sodini, C. G.

AU - Gross, B. J.

AU - Ma, T. P.

PY - 1991

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N2 - High field endurances of reoxidized-nitrided oxide (RNO), and fluorinated oxide (FOX) under dynamic Fowler-Nordheim stress were compared with that of conventional oxide. Time-dependent dielectric breakdown (TDDB) of RNO and FOX is shown to be strongly dependent on frequency, and lifetime under high frequency stress is longer than that under DC stress. RNO and FOX display interface hardness under high field injection at all frequencies. Interface trap generation is not a strong function of frequency in any of the oxides studied. Examination of charge trapping indicates that frequency-dependent hole trapping is responsible for the frequency dependence of TDDB.

AB - High field endurances of reoxidized-nitrided oxide (RNO), and fluorinated oxide (FOX) under dynamic Fowler-Nordheim stress were compared with that of conventional oxide. Time-dependent dielectric breakdown (TDDB) of RNO and FOX is shown to be strongly dependent on frequency, and lifetime under high frequency stress is longer than that under DC stress. RNO and FOX display interface hardness under high field injection at all frequencies. Interface trap generation is not a strong function of frequency in any of the oxides studied. Examination of charge trapping indicates that frequency-dependent hole trapping is responsible for the frequency dependence of TDDB.

KW - Annealing

KW - Breakdown voltage

KW - Capacitance-voltage characteristics

KW - Current measurement

KW - Electric breakdown

KW - Frequency dependence

KW - Impact ionization

KW - Monitoring

KW - Stability

KW - Stress

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DO - 10.1109/IEDM.1991.235321

M3 - Conference Paper published in a book

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T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 723

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BT - International Electron Devices Meeting 1991, IEDM 1991

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - International Electron Devices Meeting, IEDM 1991

Y2 - 8 December 1991 through 11 December 1991

ER -

Liu ZH, Rosenbaum E, Ko PK, Hu C, Cheng YC, Sodini CG et al. A comparative study of the effect of dynamic stressing on high-field endurance and stability of reoxidized-nitrided, fluorinated and conventional oxides. In International Electron Devices Meeting 1991, IEDM 1991. Institute of Electrical and Electronics Engineers Inc. 1991. p. 723-726. 235321. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM.1991.235321

A comparative study of the effect of dynamic stressing on high-field endurance and stability of reoxidized-nitrided, fluorinated and conventional oxides

Abstract

Publication series

Conference

Bibliographical note

Keywords

Access to Document

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