A continuous analytic model for undoped (lightly doped) cylindrical surrounding-gate MOSFETs by a carrier-based approach

Jin He; Feng Liu; Wei Bian; Yadong Tao; Jie Feng; Jinghua Hu; Kailiang Lu; Wen Wu; Ting Wang; Mansun Chan

A continuous analytic model for undoped (lightly doped) cylindrical surrounding-gate MOSFETs by a carrier-based approach

Jin He^*, Feng Liu, Wei Bian, Yadong Tao, Jie Feng, Jinghua Hu, Kailiang Lu, Wen Wu, Ting Wang, Mansun Chan

^*Corresponding author for this work

Department of Electronic and Computer Engineering

Research output: Contribution to journal › Journal Article › peer-review

1 Citation (Scopus)

Abstract

This paper presents a continuous analytic model for undoped (lightly doped) cylindrical surrounding-gate MOSFETs by a carrier-based approach. This model is based on an exact solution of the Poisson equation and a Pao-Sah current formulation in terms of the carrier concentration and valid for all the operation regions (linear, saturation, sub-threshold) and traces the transition between them. We have also demonstrated that the I-V characteristics obtained by this model agree with two-dimensional numerical simulations for all ranges of gate and drain voltages without any fitting-parameter, thus it will be an ideal framework for small size surrounding-gate MOSFET modelling.

Original language	English
Pages (from-to)	239-242
Number of pages	4
Journal	Chinese Journal of Electronics
Volume	16
Issue number	2
Publication status	Published - Apr 2007

Keywords

Carier-based approach
Compact modeling
Device physics
Non-charge-sheet
Non-classical MOSFETs
Surrounding-gate MOSFET

Cite this

@article{287ee03698ac4ff7ba5f86d018d4c284,

title = "A continuous analytic model for undoped (lightly doped) cylindrical surrounding-gate MOSFETs by a carrier-based approach",

abstract = "This paper presents a continuous analytic model for undoped (lightly doped) cylindrical surrounding-gate MOSFETs by a carrier-based approach. This model is based on an exact solution of the Poisson equation and a Pao-Sah current formulation in terms of the carrier concentration and valid for all the operation regions (linear, saturation, sub-threshold) and traces the transition between them. We have also demonstrated that the I-V characteristics obtained by this model agree with two-dimensional numerical simulations for all ranges of gate and drain voltages without any fitting-parameter, thus it will be an ideal framework for small size surrounding-gate MOSFET modelling.",

keywords = "Carier-based approach, Compact modeling, Device physics, Non-charge-sheet, Non-classical MOSFETs, Surrounding-gate MOSFET",

author = "Jin He and Feng Liu and Wei Bian and Yadong Tao and Jie Feng and Jinghua Hu and Kailiang Lu and Wen Wu and Ting Wang and Mansun Chan",

year = "2007",

month = apr,

language = "English",

volume = "16",

pages = "239--242",

journal = "Chinese Journal of Electronics",

issn = "1022-4653",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

}

TY - JOUR

T1 - A continuous analytic model for undoped (lightly doped) cylindrical surrounding-gate MOSFETs by a carrier-based approach

AU - He, Jin

AU - Liu, Feng

AU - Bian, Wei

AU - Tao, Yadong

AU - Feng, Jie

AU - Hu, Jinghua

AU - Lu, Kailiang

AU - Wu, Wen

AU - Wang, Ting

AU - Chan, Mansun

PY - 2007/4

Y1 - 2007/4

N2 - This paper presents a continuous analytic model for undoped (lightly doped) cylindrical surrounding-gate MOSFETs by a carrier-based approach. This model is based on an exact solution of the Poisson equation and a Pao-Sah current formulation in terms of the carrier concentration and valid for all the operation regions (linear, saturation, sub-threshold) and traces the transition between them. We have also demonstrated that the I-V characteristics obtained by this model agree with two-dimensional numerical simulations for all ranges of gate and drain voltages without any fitting-parameter, thus it will be an ideal framework for small size surrounding-gate MOSFET modelling.

AB - This paper presents a continuous analytic model for undoped (lightly doped) cylindrical surrounding-gate MOSFETs by a carrier-based approach. This model is based on an exact solution of the Poisson equation and a Pao-Sah current formulation in terms of the carrier concentration and valid for all the operation regions (linear, saturation, sub-threshold) and traces the transition between them. We have also demonstrated that the I-V characteristics obtained by this model agree with two-dimensional numerical simulations for all ranges of gate and drain voltages without any fitting-parameter, thus it will be an ideal framework for small size surrounding-gate MOSFET modelling.

KW - Carier-based approach

KW - Compact modeling

KW - Device physics

KW - Non-charge-sheet

KW - Non-classical MOSFETs

KW - Surrounding-gate MOSFET

UR - https://www.scopus.com/pages/publications/34247526936

M3 - Journal Article

AN - SCOPUS:34247526936

SN - 1022-4653

VL - 16

SP - 239

EP - 242

JO - Chinese Journal of Electronics

JF - Chinese Journal of Electronics

IS - 2

ER -

A continuous analytic model for undoped (lightly doped) cylindrical surrounding-gate MOSFETs by a carrier-based approach

Abstract

Keywords

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