A deep-submicrometer raised source/drain LDD structure fabricated using hot-wall epitaxy

J. E. Moon; C. Galewski; T. Garfinkel; M. Wong; W. G. Oldham; P. K. Ko; C. Hu

doi:10.1109/VTSA.1991.246698

A deep-submicrometer raised source/drain LDD structure fabricated using hot-wall epitaxy

J. E. Moon, C. Galewski, T. Garfinkel, M. Wong, W. G. Oldham, P. K. Ko, C. Hu

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

1 Citation (Scopus)

Abstract

An elevated LDD (ELDD) structure has been designed, fabricated, and evaluated. A hot-wall reactor was used to selectively grow epitaxial silicon in the regions adjacent to the gate. The ELDD devices were equivalent to TOPS and LDD devices in current drive capability. The hot-electron reliability of the ELDD devices was superior to that of LDD devices. A general comparison among alternative LDD structures is given in terms of critical performance and reliability criteria. The ELDD structure is shown to be a promising candidate for deep-submicrometer applications.

Original language	English
Title of host publication	1991 International Symposium on VLSI Technology, Systems, and Applications - Proceedings of Technical Papers, VTSA 1991
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	117-121
Number of pages	5
ISBN (Electronic)	078030036X, 9780780300361
DOIs	https://doi.org/10.1109/VTSA.1991.246698
Publication status	Published - 1991
Externally published	Yes
Event	1991 International Symposium on VLSI Technology, Systems, and Applications, VTSA 1991 - Taipei, Taiwan, Province of China Duration: 22 May 1991 → 24 May 1991

Publication series

Name	International Symposium on VLSI Technology, Systems, and Applications, Proceedings
ISSN (Print)	1930-8868

Conference

Conference	1991 International Symposium on VLSI Technology, Systems, and Applications, VTSA 1991
Country/Territory	Taiwan, Province of China
City	Taipei
Period	22/05/91 → 24/05/91

Bibliographical note

Publisher Copyright:
© 1991 IEEE.

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10.1109/VTSA.1991.246698

Cite this

Moon, J. E., Galewski, C., Garfinkel, T., Wong, M., Oldham, W. G., Ko, P. K., & Hu, C. (1991). A deep-submicrometer raised source/drain LDD structure fabricated using hot-wall epitaxy. In 1991 International Symposium on VLSI Technology, Systems, and Applications - Proceedings of Technical Papers, VTSA 1991 (pp. 117-121). Article 246698 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VTSA.1991.246698

Moon, J. E. ; Galewski, C. ; Garfinkel, T. et al. / A deep-submicrometer raised source/drain LDD structure fabricated using hot-wall epitaxy. 1991 International Symposium on VLSI Technology, Systems, and Applications - Proceedings of Technical Papers, VTSA 1991. Institute of Electrical and Electronics Engineers Inc., 1991. pp. 117-121 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

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abstract = "An elevated LDD (ELDD) structure has been designed, fabricated, and evaluated. A hot-wall reactor was used to selectively grow epitaxial silicon in the regions adjacent to the gate. The ELDD devices were equivalent to TOPS and LDD devices in current drive capability. The hot-electron reliability of the ELDD devices was superior to that of LDD devices. A general comparison among alternative LDD structures is given in terms of critical performance and reliability criteria. The ELDD structure is shown to be a promising candidate for deep-submicrometer applications.",

author = "Moon, \{J. E.\} and C. Galewski and T. Garfinkel and M. Wong and Oldham, \{W. G.\} and Ko, \{P. K.\} and C. Hu",

note = "Publisher Copyright: {\textcopyright} 1991 IEEE.; 1991 International Symposium on VLSI Technology, Systems, and Applications, VTSA 1991 ; Conference date: 22-05-1991 Through 24-05-1991",

year = "1991",

doi = "10.1109/VTSA.1991.246698",

language = "English",

series = "International Symposium on VLSI Technology, Systems, and Applications, Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Moon, JE, Galewski, C, Garfinkel, T, Wong, M, Oldham, WG, Ko, PK & Hu, C 1991, A deep-submicrometer raised source/drain LDD structure fabricated using hot-wall epitaxy. in 1991 International Symposium on VLSI Technology, Systems, and Applications - Proceedings of Technical Papers, VTSA 1991., 246698, International Symposium on VLSI Technology, Systems, and Applications, Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 117-121, 1991 International Symposium on VLSI Technology, Systems, and Applications, VTSA 1991, Taipei, Taiwan, Province of China, 22/05/91. https://doi.org/10.1109/VTSA.1991.246698

A deep-submicrometer raised source/drain LDD structure fabricated using hot-wall epitaxy. / Moon, J. E.; Galewski, C.; Garfinkel, T. et al.
1991 International Symposium on VLSI Technology, Systems, and Applications - Proceedings of Technical Papers, VTSA 1991. Institute of Electrical and Electronics Engineers Inc., 1991. p. 117-121 246698 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

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AU - Ko, P. K.

AU - Hu, C.

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AB - An elevated LDD (ELDD) structure has been designed, fabricated, and evaluated. A hot-wall reactor was used to selectively grow epitaxial silicon in the regions adjacent to the gate. The ELDD devices were equivalent to TOPS and LDD devices in current drive capability. The hot-electron reliability of the ELDD devices was superior to that of LDD devices. A general comparison among alternative LDD structures is given in terms of critical performance and reliability criteria. The ELDD structure is shown to be a promising candidate for deep-submicrometer applications.

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DO - 10.1109/VTSA.1991.246698

M3 - Conference Paper published in a book

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BT - 1991 International Symposium on VLSI Technology, Systems, and Applications - Proceedings of Technical Papers, VTSA 1991

PB - Institute of Electrical and Electronics Engineers Inc.

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Y2 - 22 May 1991 through 24 May 1991

ER -

Moon JE, Galewski C, Garfinkel T, Wong M, Oldham WG, Ko PK et al. A deep-submicrometer raised source/drain LDD structure fabricated using hot-wall epitaxy. In 1991 International Symposium on VLSI Technology, Systems, and Applications - Proceedings of Technical Papers, VTSA 1991. Institute of Electrical and Electronics Engineers Inc. 1991. p. 117-121. 246698. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). doi: 10.1109/VTSA.1991.246698

A deep-submicrometer raised source/drain LDD structure fabricated using hot-wall epitaxy

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