A generic numerical model for detection of terahertz radiation in MOS field-effect transistors

Yinglei Wang; Zhifeng Yan; Jingxuan Zhu; Lining Zhang; Xinnan Lin; Jin He; Juncheng Cao; Mansun Chan

doi:10.1016/j.sse.2010.03.009

A generic numerical model for detection of terahertz radiation in MOS field-effect transistors

Yinglei Wang, Zhifeng Yan, Jingxuan Zhu, Lining Zhang, Xinnan Lin, Jin He^*, Juncheng Cao, Mansun Chan

^*Corresponding author for this work

Department of Electronic and Computer Engineering

Research output: Contribution to journal › Journal Article › peer-review

4 Citations (Scopus)

Abstract

A generic numerical model which is valid both in the strong inversion regime and sub-threshold regime for the detection of terahertz radiation utilizing Metal-Oxide-Semiconductor (MOS) Field-Effect Transistors (FETs) is developed in this paper. A general carrier density equation and gate leakage current are coupled to the basic hydrodynamic equations which govern the electron transport in the 2D channel of the MOS field-effect transistor to obtain the numerical solution; a progress-based photo-response signal of the terahertz radiation of MOSFET is calculated. The simulation results are compared with existing analytical results, proving the validity of the proposed numerical model and overcoming limitations of the analytical theories.

Original language	English
Pages (from-to)	791-795
Number of pages	5
Journal	Solid-State Electronics
Volume	54
Issue number	8
DOIs	https://doi.org/10.1016/j.sse.2010.03.009
Publication status	Published - Aug 2010

Keywords

Field-effect transistors
Numerical model
Strong inversion
Sub-threshold
Terahertz detection

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10.1016/j.sse.2010.03.009

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title = "A generic numerical model for detection of terahertz radiation in MOS field-effect transistors",

abstract = "A generic numerical model which is valid both in the strong inversion regime and sub-threshold regime for the detection of terahertz radiation utilizing Metal-Oxide-Semiconductor (MOS) Field-Effect Transistors (FETs) is developed in this paper. A general carrier density equation and gate leakage current are coupled to the basic hydrodynamic equations which govern the electron transport in the 2D channel of the MOS field-effect transistor to obtain the numerical solution; a progress-based photo-response signal of the terahertz radiation of MOSFET is calculated. The simulation results are compared with existing analytical results, proving the validity of the proposed numerical model and overcoming limitations of the analytical theories.",

keywords = "Field-effect transistors, Numerical model, Strong inversion, Sub-threshold, Terahertz detection",

author = "Yinglei Wang and Zhifeng Yan and Jingxuan Zhu and Lining Zhang and Xinnan Lin and Jin He and Juncheng Cao and Mansun Chan",

year = "2010",

month = aug,

doi = "10.1016/j.sse.2010.03.009",

language = "English",

volume = "54",

pages = "791--795",

journal = "Solid-State Electronics",

issn = "0038-1101",

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TY - JOUR

T1 - A generic numerical model for detection of terahertz radiation in MOS field-effect transistors

AU - Wang, Yinglei

AU - Yan, Zhifeng

AU - Zhu, Jingxuan

AU - Zhang, Lining

AU - Lin, Xinnan

AU - He, Jin

AU - Cao, Juncheng

AU - Chan, Mansun

PY - 2010/8

Y1 - 2010/8

N2 - A generic numerical model which is valid both in the strong inversion regime and sub-threshold regime for the detection of terahertz radiation utilizing Metal-Oxide-Semiconductor (MOS) Field-Effect Transistors (FETs) is developed in this paper. A general carrier density equation and gate leakage current are coupled to the basic hydrodynamic equations which govern the electron transport in the 2D channel of the MOS field-effect transistor to obtain the numerical solution; a progress-based photo-response signal of the terahertz radiation of MOSFET is calculated. The simulation results are compared with existing analytical results, proving the validity of the proposed numerical model and overcoming limitations of the analytical theories.

AB - A generic numerical model which is valid both in the strong inversion regime and sub-threshold regime for the detection of terahertz radiation utilizing Metal-Oxide-Semiconductor (MOS) Field-Effect Transistors (FETs) is developed in this paper. A general carrier density equation and gate leakage current are coupled to the basic hydrodynamic equations which govern the electron transport in the 2D channel of the MOS field-effect transistor to obtain the numerical solution; a progress-based photo-response signal of the terahertz radiation of MOSFET is calculated. The simulation results are compared with existing analytical results, proving the validity of the proposed numerical model and overcoming limitations of the analytical theories.

KW - Field-effect transistors

KW - Numerical model

KW - Strong inversion

KW - Sub-threshold

KW - Terahertz detection

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:000279083700009

UR - https://openalex.org/W2005694366

UR - https://www.scopus.com/pages/publications/77955313644

U2 - 10.1016/j.sse.2010.03.009

DO - 10.1016/j.sse.2010.03.009

M3 - Journal Article

SN - 0038-1101

VL - 54

SP - 791

EP - 795

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 8

ER -

A generic numerical model for detection of terahertz radiation in MOS field-effect transistors

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Keywords

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