A High-Efficiency Double-Side Silicon- Embedded Inductor for Integrated DC-DC Converter Applications

Guangfu Lv; Niteng Liao; Yixiao DIng; Xiangming Fang; Feiming Bai; Johnny K.O. Sin; Rongxiang Wu

doi:10.1109/TED.2021.3096923

A High-Efficiency Double-Side Silicon- Embedded Inductor for Integrated DC-DC Converter Applications

Guangfu Lv
, Niteng Liao
, Yixiao DIng
, Xiangming Fang
, Feiming Bai
, Johnny K.O. Sin
, Rongxiang Wu^*

^*Corresponding author for this work

Department of Electronic and Computer Engineering

Research output: Contribution to journal › Journal Article › peer-review

5 Citations (Scopus)

Abstract

In this brief, a novel double-side silicon-embedded coreless inductor is proposed and demonstrated for integrated dc-dc converter applications. The inductor has double-side thick windings embedded into the silicon substrate and connected in parallel. Extremely large effective metal thickness of 300~mu text{m} can, therefore, be achieved. Consequently, the 0.8 mm2 inductor fabricated shows a low dc resistance of 42 text{m}Omega . A large inductance to dc resistance ratio of 0.4 nH/ text{m}Omega is then achieved with an inductance over 16.1 nH. The calculated peak effective inductor efficiency is 96.1% for 1.8-0.85 V, 100 MHz dc-dc conversion.

Original language	English
Article number	9511635
Pages (from-to)	4801-4804
Number of pages	4
Journal	IEEE Transactions on Electron Devices
Volume	68
Issue number	9
Early online date	11 Aug 2021
DOIs	https://doi.org/10.1109/TED.2021.3096923
Publication status	Published - Sept 2021

Bibliographical note

Publisher Copyright:
© 1963-2012 IEEE.

Keywords

Embedded inductor
integrated dc-dc converter
micropower inductor

Access to Document

10.1109/TED.2021.3096923

Cite this

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title = "A High-Efficiency Double-Side Silicon- Embedded Inductor for Integrated DC-DC Converter Applications",

abstract = "In this brief, a novel double-side silicon-embedded coreless inductor is proposed and demonstrated for integrated dc-dc converter applications. The inductor has double-side thick windings embedded into the silicon substrate and connected in parallel. Extremely large effective metal thickness of 300\textasciitilde{}mu text\{m\} can, therefore, be achieved. Consequently, the 0.8 mm2 inductor fabricated shows a low dc resistance of 42 text\{m\}Omega . A large inductance to dc resistance ratio of 0.4 nH/ text\{m\}Omega is then achieved with an inductance over 16.1 nH. The calculated peak effective inductor efficiency is 96.1\% for 1.8-0.85 V, 100 MHz dc-dc conversion.",

keywords = "Embedded inductor, integrated dc-dc converter, micropower inductor",

author = "Guangfu Lv and Niteng Liao and Yixiao DIng and Xiangming Fang and Feiming Bai and Sin, \{Johnny K.O.\} and Rongxiang Wu",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2021",

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doi = "10.1109/TED.2021.3096923",

language = "English",

volume = "68",

pages = "4801--4804",

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TY - JOUR

T1 - A High-Efficiency Double-Side Silicon- Embedded Inductor for Integrated DC-DC Converter Applications

AU - Lv, Guangfu

AU - Liao, Niteng

AU - DIng, Yixiao

AU - Fang, Xiangming

AU - Bai, Feiming

AU - Sin, Johnny K.O.

AU - Wu, Rongxiang

PY - 2021/9

Y1 - 2021/9

N2 - In this brief, a novel double-side silicon-embedded coreless inductor is proposed and demonstrated for integrated dc-dc converter applications. The inductor has double-side thick windings embedded into the silicon substrate and connected in parallel. Extremely large effective metal thickness of 300~mu text{m} can, therefore, be achieved. Consequently, the 0.8 mm2 inductor fabricated shows a low dc resistance of 42 text{m}Omega . A large inductance to dc resistance ratio of 0.4 nH/ text{m}Omega is then achieved with an inductance over 16.1 nH. The calculated peak effective inductor efficiency is 96.1% for 1.8-0.85 V, 100 MHz dc-dc conversion.

AB - In this brief, a novel double-side silicon-embedded coreless inductor is proposed and demonstrated for integrated dc-dc converter applications. The inductor has double-side thick windings embedded into the silicon substrate and connected in parallel. Extremely large effective metal thickness of 300~mu text{m} can, therefore, be achieved. Consequently, the 0.8 mm2 inductor fabricated shows a low dc resistance of 42 text{m}Omega . A large inductance to dc resistance ratio of 0.4 nH/ text{m}Omega is then achieved with an inductance over 16.1 nH. The calculated peak effective inductor efficiency is 96.1% for 1.8-0.85 V, 100 MHz dc-dc conversion.

KW - Embedded inductor

KW - integrated dc-dc converter

KW - micropower inductor

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:000686761500104

UR - https://openalex.org/W3193778439

UR - https://www.scopus.com/pages/publications/85113332411

U2 - 10.1109/TED.2021.3096923

DO - 10.1109/TED.2021.3096923

M3 - Journal Article

SN - 0018-9383

VL - 68

SP - 4801

EP - 4804

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 9

M1 - 9511635

ER -

A High-Efficiency Double-Side Silicon- Embedded Inductor for Integrated DC-DC Converter Applications

Abstract

Bibliographical note

Keywords

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