A high-performance five-channel NMOSFET using selective epitaxial growth and lateral solid phase epitaxy

Mahender Kumar; Haitao Liu; Johnny K.O. Sin

A high-performance five-channel NMOSFET using selective epitaxial growth and lateral solid phase epitaxy

Mahender Kumar
, Haitao Liu
, Johnny K.O. Sin^*

^*Corresponding author for this work

Department of Electronic and Computer Engineering

Research output: Contribution to journal › Letter › peer-review

3 Citations (Scopus)

Abstract

In this letter, a novel Five-Channel NMOSFET (FC-NMOS) using selective epitaxial growth (SEG) and lateral solid phase epitaxy (LSPE) is reported. The FC-NMOS is an integration of a conventional bulk NMOS, two vertical NMOS, and a gate-all-around NMOS. The top silicon layer for implementing the gate-all-around structure is obtained by using the LSPE with the SEG pillar as the silicon seed. The FC-NMOS has a 3.6 × higher current drive as compared to the conventional bulk NMOS. This makes the FC-NMOS very promising for VLSI/ULSI applications.

Original language	English
Pages (from-to)	261-263
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	23
Issue number	5
Publication status	Published - May 2002

Keywords

Double-gate
Gate-all-around
Selective epitaxy
Solid-phase epitaxy
Vertical transistor

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https://hdl.handle.net/1783.1/15976

Cite this

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title = "A high-performance five-channel NMOSFET using selective epitaxial growth and lateral solid phase epitaxy",

abstract = "In this letter, a novel Five-Channel NMOSFET (FC-NMOS) using selective epitaxial growth (SEG) and lateral solid phase epitaxy (LSPE) is reported. The FC-NMOS is an integration of a conventional bulk NMOS, two vertical NMOS, and a gate-all-around NMOS. The top silicon layer for implementing the gate-all-around structure is obtained by using the LSPE with the SEG pillar as the silicon seed. The FC-NMOS has a 3.6 × higher current drive as compared to the conventional bulk NMOS. This makes the FC-NMOS very promising for VLSI/ULSI applications.",

keywords = "Double-gate, Gate-all-around, Selective epitaxy, Solid-phase epitaxy, Vertical transistor",

author = "Mahender Kumar and Haitao Liu and Sin, \{Johnny K.O.\}",

year = "2002",

month = may,

language = "English",

volume = "23",

pages = "261--263",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "5",

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TY - JOUR

T1 - A high-performance five-channel NMOSFET using selective epitaxial growth and lateral solid phase epitaxy

AU - Kumar, Mahender

AU - Liu, Haitao

AU - Sin, Johnny K.O.

PY - 2002/5

Y1 - 2002/5

N2 - In this letter, a novel Five-Channel NMOSFET (FC-NMOS) using selective epitaxial growth (SEG) and lateral solid phase epitaxy (LSPE) is reported. The FC-NMOS is an integration of a conventional bulk NMOS, two vertical NMOS, and a gate-all-around NMOS. The top silicon layer for implementing the gate-all-around structure is obtained by using the LSPE with the SEG pillar as the silicon seed. The FC-NMOS has a 3.6 × higher current drive as compared to the conventional bulk NMOS. This makes the FC-NMOS very promising for VLSI/ULSI applications.

AB - In this letter, a novel Five-Channel NMOSFET (FC-NMOS) using selective epitaxial growth (SEG) and lateral solid phase epitaxy (LSPE) is reported. The FC-NMOS is an integration of a conventional bulk NMOS, two vertical NMOS, and a gate-all-around NMOS. The top silicon layer for implementing the gate-all-around structure is obtained by using the LSPE with the SEG pillar as the silicon seed. The FC-NMOS has a 3.6 × higher current drive as compared to the conventional bulk NMOS. This makes the FC-NMOS very promising for VLSI/ULSI applications.

KW - Double-gate

KW - Gate-all-around

KW - Selective epitaxy

KW - Solid-phase epitaxy

KW - Vertical transistor

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:000175234700009

M3 - Letter

SN - 0741-3106

VL - 23

SP - 261

EP - 263

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 5

ER -

A high-performance five-channel NMOSFET using selective epitaxial growth and lateral solid phase epitaxy

Abstract

Keywords

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