A High-Performance Lateral Bipolar Transistor Fabricated on SIMOX

Stephen A. Parke; Chenming Hu; Ping K. Ko

doi:10.1109/55.215091

A High-Performance Lateral Bipolar Transistor Fabricated on SIMOX

Stephen A. Parke, Chenming Hu, Ping K. Ko

Research output: Contribution to journal › Journal Article › peer-review

22 Citations (Scopus)

Abstract

Double-diffused, lateral n-p-n bipolar transistors were fabricated in a simple CMOS-like process using SIMOX silicon-on-insulator (SOI) substrates. Excellent device characteristics were achieved, with peak h_FE = 120, BV_CEO= 10 V, and peak f_t = 4.5 GHz. The f_t versus BVCEO trade-off was studied as a function of n collector width. f_t > 25 GHz is predicted for this structure with an improved device layout and optimized basewidth. This process may be easily extended in order to fabricate complementary BJT’s in a C-BiCMOS thin-film SOI technology.

Original language	English
Pages (from-to)	33-35
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	14
Issue number	1
DOIs	https://doi.org/10.1109/55.215091
Publication status	Published - Jan 1993
Externally published	Yes

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abstract = "Double-diffused, lateral n-p-n bipolar transistors were fabricated in a simple CMOS-like process using SIMOX silicon-on-insulator (SOI) substrates. Excellent device characteristics were achieved, with peak hFE = 120, BVCEO= 10 V, and peak ft = 4.5 GHz. The ft versus BVCEO trade-off was studied as a function of n collector width. ft > 25 GHz is predicted for this structure with an improved device layout and optimized basewidth. This process may be easily extended in order to fabricate complementary BJT{\textquoteright}s in a C-BiCMOS thin-film SOI technology.",

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year = "1993",

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AU - Ko, Ping K.

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N2 - Double-diffused, lateral n-p-n bipolar transistors were fabricated in a simple CMOS-like process using SIMOX silicon-on-insulator (SOI) substrates. Excellent device characteristics were achieved, with peak hFE = 120, BVCEO= 10 V, and peak ft = 4.5 GHz. The ft versus BVCEO trade-off was studied as a function of n collector width. ft > 25 GHz is predicted for this structure with an improved device layout and optimized basewidth. This process may be easily extended in order to fabricate complementary BJT’s in a C-BiCMOS thin-film SOI technology.

AB - Double-diffused, lateral n-p-n bipolar transistors were fabricated in a simple CMOS-like process using SIMOX silicon-on-insulator (SOI) substrates. Excellent device characteristics were achieved, with peak hFE = 120, BVCEO= 10 V, and peak ft = 4.5 GHz. The ft versus BVCEO trade-off was studied as a function of n collector width. ft > 25 GHz is predicted for this structure with an improved device layout and optimized basewidth. This process may be easily extended in order to fabricate complementary BJT’s in a C-BiCMOS thin-film SOI technology.

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A High-Performance Lateral Bipolar Transistor Fabricated on SIMOX

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