A hybrid a-Si and poly-Si TFTs technology for AMOLED pixel circuits

Longyan Wang; Lei Sun; Dedong Han; Yi Wang; Mansun Chan; Shengdong Zhang

doi:10.1109/JDT.2014.2301554

A hybrid a-Si and poly-Si TFTs technology for AMOLED pixel circuits

Longyan Wang, Lei Sun, Dedong Han, Yi Wang, Mansun Chan, Shengdong Zhang

Department of Electronic and Computer Engineering

Research output: Contribution to journal › Journal Article › peer-review

10 Citations (Scopus)

Abstract

A hybrid thin film transistor (TFT) technology is proposed and demonstrated, which features a simultaneous fabrication of amorphous silicon (a-Si) TFTs with low off-current and polycrystalline silicon (poly-Si) TFTs with high carrier mobility on one substrate in one single process. For the a-Si TFT fabrication, the active film is the as-deposited LPCVD a-Si film, whereas, for the poly-Si TFT fabrication, the poly-Si active film is the locally crystallized LPCVD a-Si film. The localized crystallization is realized via using metal-induced lateral crystallization (MILC) method. This proposed technology is applicable to active-matrix organic light-emitting diode (AMOLED) pixel circuits where switching TFTs and driving TFTs are required to be with low off-current and high on-current, respectively.

Original language	English
Article number	6716954
Pages (from-to)	317-320
Number of pages	4
Journal	IEEE/OSA Journal of Display Technology
Volume	10
Issue number	4
DOIs	https://doi.org/10.1109/JDT.2014.2301554
Publication status	Published - Apr 2014

Keywords

Active-matrix organic light-emitting diode (AMOLED)
amorphous silicon (a-Si)
metal-induced lateral crystallization (MILC)
polycrystalline silicon (poly-Si)
thin film transistor (TFT)

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10.1109/JDT.2014.2301554

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title = "A hybrid a-Si and poly-Si TFTs technology for AMOLED pixel circuits",

abstract = "A hybrid thin film transistor (TFT) technology is proposed and demonstrated, which features a simultaneous fabrication of amorphous silicon (a-Si) TFTs with low off-current and polycrystalline silicon (poly-Si) TFTs with high carrier mobility on one substrate in one single process. For the a-Si TFT fabrication, the active film is the as-deposited LPCVD a-Si film, whereas, for the poly-Si TFT fabrication, the poly-Si active film is the locally crystallized LPCVD a-Si film. The localized crystallization is realized via using metal-induced lateral crystallization (MILC) method. This proposed technology is applicable to active-matrix organic light-emitting diode (AMOLED) pixel circuits where switching TFTs and driving TFTs are required to be with low off-current and high on-current, respectively.",

keywords = "Active-matrix organic light-emitting diode (AMOLED), amorphous silicon (a-Si), metal-induced lateral crystallization (MILC), polycrystalline silicon (poly-Si), thin film transistor (TFT)",

author = "Longyan Wang and Lei Sun and Dedong Han and Yi Wang and Mansun Chan and Shengdong Zhang",

year = "2014",

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doi = "10.1109/JDT.2014.2301554",

language = "English",

volume = "10",

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T1 - A hybrid a-Si and poly-Si TFTs technology for AMOLED pixel circuits

AU - Wang, Longyan

AU - Sun, Lei

AU - Han, Dedong

AU - Wang, Yi

AU - Chan, Mansun

AU - Zhang, Shengdong

PY - 2014/4

Y1 - 2014/4

N2 - A hybrid thin film transistor (TFT) technology is proposed and demonstrated, which features a simultaneous fabrication of amorphous silicon (a-Si) TFTs with low off-current and polycrystalline silicon (poly-Si) TFTs with high carrier mobility on one substrate in one single process. For the a-Si TFT fabrication, the active film is the as-deposited LPCVD a-Si film, whereas, for the poly-Si TFT fabrication, the poly-Si active film is the locally crystallized LPCVD a-Si film. The localized crystallization is realized via using metal-induced lateral crystallization (MILC) method. This proposed technology is applicable to active-matrix organic light-emitting diode (AMOLED) pixel circuits where switching TFTs and driving TFTs are required to be with low off-current and high on-current, respectively.

AB - A hybrid thin film transistor (TFT) technology is proposed and demonstrated, which features a simultaneous fabrication of amorphous silicon (a-Si) TFTs with low off-current and polycrystalline silicon (poly-Si) TFTs with high carrier mobility on one substrate in one single process. For the a-Si TFT fabrication, the active film is the as-deposited LPCVD a-Si film, whereas, for the poly-Si TFT fabrication, the poly-Si active film is the locally crystallized LPCVD a-Si film. The localized crystallization is realized via using metal-induced lateral crystallization (MILC) method. This proposed technology is applicable to active-matrix organic light-emitting diode (AMOLED) pixel circuits where switching TFTs and driving TFTs are required to be with low off-current and high on-current, respectively.

KW - Active-matrix organic light-emitting diode (AMOLED)

KW - amorphous silicon (a-Si)

KW - metal-induced lateral crystallization (MILC)

KW - polycrystalline silicon (poly-Si)

KW - thin film transistor (TFT)

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UR - https://openalex.org/W2079794962

UR - https://www.scopus.com/pages/publications/84898679891

U2 - 10.1109/JDT.2014.2301554

DO - 10.1109/JDT.2014.2301554

M3 - Journal Article

SN - 1551-319X

VL - 10

SP - 317

EP - 320

JO - IEEE/OSA Journal of Display Technology

JF - IEEE/OSA Journal of Display Technology

IS - 4

M1 - 6716954

ER -

A hybrid a-Si and poly-Si TFTs technology for AMOLED pixel circuits

Abstract

Keywords

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