A new approach to study the channel charge partition of MOS transistors during non-quasi-static (NQS) turn-on

Wai Kit Lee; Mansun Chan

doi:10.1109/HKEDM.1998.740202

A new approach to study the channel charge partition of MOS transistors during non-quasi-static (NQS) turn-on

Wai Kit Lee, Mansun Chan

Department of Electronic and Computer Engineering

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

1 Citation (Scopus)

Abstract

A new approach is used to study the channel charge partition of MOS transistors during Non-Quasi-Static (NQS) turn-on. A 2-D device simulator is used to separate the DC and transient NQS source/drain current. The transient channel charge partition ratio can then be deduced from the corresponding terminal currents. While the 40/60 charge partition ratio in saturation region has been widely accepted, it is found to be closer to 0/100 during NQS turn-on. Also the charge partition ratio has a strong dependent on the ramp rate of the input signal.

Original language	English
Title of host publication	Proceedings - 1998 IEEE Hong Kong Electron Devices Meeting, HKEDM 1998
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	122-125
Number of pages	4
ISBN (Electronic)	0780349326, 9780780349322
DOIs	https://doi.org/10.1109/HKEDM.1998.740202
Publication status	Published - 1998
Event	5th IEEE Hong Kong Electron Devices Meeting, HKEDM 1998 - Hong Kong, Hong Kong Duration: 29 Aug 1998 → 29 Aug 1998

Publication series

Name	Proceedings - 1998 IEEE Hong Kong Electron Devices Meeting, HKEDM 1998
Volume	1998-August

Conference

Conference	5th IEEE Hong Kong Electron Devices Meeting, HKEDM 1998
Country/Territory	Hong Kong
City	Hong Kong
Period	29/08/98 → 29/08/98

Bibliographical note

Publisher Copyright:
© 1998 IEEE.

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10.1109/HKEDM.1998.740202

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Lee, W. K., & Chan, M. (1998). A new approach to study the channel charge partition of MOS transistors during non-quasi-static (NQS) turn-on. In Proceedings - 1998 IEEE Hong Kong Electron Devices Meeting, HKEDM 1998 (pp. 122-125). Article 740202 (Proceedings - 1998 IEEE Hong Kong Electron Devices Meeting, HKEDM 1998; Vol. 1998-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/HKEDM.1998.740202

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title = "A new approach to study the channel charge partition of MOS transistors during non-quasi-static (NQS) turn-on",

abstract = "A new approach is used to study the channel charge partition of MOS transistors during Non-Quasi-Static (NQS) turn-on. A 2-D device simulator is used to separate the DC and transient NQS source/drain current. The transient channel charge partition ratio can then be deduced from the corresponding terminal currents. While the 40/60 charge partition ratio in saturation region has been widely accepted, it is found to be closer to 0/100 during NQS turn-on. Also the charge partition ratio has a strong dependent on the ramp rate of the input signal.",

author = "Lee, \{Wai Kit\} and Mansun Chan",

note = "Publisher Copyright: {\textcopyright} 1998 IEEE.; 5th IEEE Hong Kong Electron Devices Meeting, HKEDM 1998 ; Conference date: 29-08-1998 Through 29-08-1998",

year = "1998",

doi = "10.1109/HKEDM.1998.740202",

language = "English",

series = "Proceedings - 1998 IEEE Hong Kong Electron Devices Meeting, HKEDM 1998",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Lee, WK & Chan, M 1998, A new approach to study the channel charge partition of MOS transistors during non-quasi-static (NQS) turn-on. in Proceedings - 1998 IEEE Hong Kong Electron Devices Meeting, HKEDM 1998., 740202, Proceedings - 1998 IEEE Hong Kong Electron Devices Meeting, HKEDM 1998, vol. 1998-August, Institute of Electrical and Electronics Engineers Inc., pp. 122-125, 5th IEEE Hong Kong Electron Devices Meeting, HKEDM 1998, Hong Kong, Hong Kong, 29/08/98. https://doi.org/10.1109/HKEDM.1998.740202

A new approach to study the channel charge partition of MOS transistors during non-quasi-static (NQS) turn-on. / Lee, Wai Kit; Chan, Mansun.
Proceedings - 1998 IEEE Hong Kong Electron Devices Meeting, HKEDM 1998. Institute of Electrical and Electronics Engineers Inc., 1998. p. 122-125 740202 (Proceedings - 1998 IEEE Hong Kong Electron Devices Meeting, HKEDM 1998; Vol. 1998-August).

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

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AU - Lee, Wai Kit

AU - Chan, Mansun

PY - 1998

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N2 - A new approach is used to study the channel charge partition of MOS transistors during Non-Quasi-Static (NQS) turn-on. A 2-D device simulator is used to separate the DC and transient NQS source/drain current. The transient channel charge partition ratio can then be deduced from the corresponding terminal currents. While the 40/60 charge partition ratio in saturation region has been widely accepted, it is found to be closer to 0/100 during NQS turn-on. Also the charge partition ratio has a strong dependent on the ramp rate of the input signal.

AB - A new approach is used to study the channel charge partition of MOS transistors during Non-Quasi-Static (NQS) turn-on. A 2-D device simulator is used to separate the DC and transient NQS source/drain current. The transient channel charge partition ratio can then be deduced from the corresponding terminal currents. While the 40/60 charge partition ratio in saturation region has been widely accepted, it is found to be closer to 0/100 during NQS turn-on. Also the charge partition ratio has a strong dependent on the ramp rate of the input signal.

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U2 - 10.1109/HKEDM.1998.740202

DO - 10.1109/HKEDM.1998.740202

M3 - Conference Paper published in a book

T3 - Proceedings - 1998 IEEE Hong Kong Electron Devices Meeting, HKEDM 1998

SP - 122

EP - 125

BT - Proceedings - 1998 IEEE Hong Kong Electron Devices Meeting, HKEDM 1998

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 5th IEEE Hong Kong Electron Devices Meeting, HKEDM 1998

Y2 - 29 August 1998 through 29 August 1998

ER -

Lee WK, Chan M. A new approach to study the channel charge partition of MOS transistors during non-quasi-static (NQS) turn-on. In Proceedings - 1998 IEEE Hong Kong Electron Devices Meeting, HKEDM 1998. Institute of Electrical and Electronics Engineers Inc. 1998. p. 122-125. 740202. (Proceedings - 1998 IEEE Hong Kong Electron Devices Meeting, HKEDM 1998). doi: 10.1109/HKEDM.1998.740202

A new approach to study the channel charge partition of MOS transistors during non-quasi-static (NQS) turn-on

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