A new fin p-body insulated gate bipolar transistor with low miller capacitance

Hao Feng; Wentao Yang; Yuichi Onozawa; Takashi Yoshimura; Akira Tamenori; Johnny K.O. Sin

doi:10.1109/LED.2015.2426197

A new fin p-body insulated gate bipolar transistor with low miller capacitance

Hao Feng
, Wentao Yang
, Yuichi Onozawa
, Takashi Yoshimura
, Akira Tamenori
, Johnny K.O. Sin

Department of Electronic and Computer Engineering

Research output: Contribution to journal › Journal Article › peer-review

39 Citations (Scopus)

Abstract

A new fin p-body insulated gate bipolar transistor (Fin-p IGBT) is designed and experimentally demonstrated. The device features wide trenches and spacer gates, which is implemented using a simple and low-cost process. Compared with the conventional floating p-body IGBT, the fabricated Fin-p IGBT is able to achieve remarkable reduction in both Miller capacitance (-60% at V_CE of 15 V) and gate charge (-46%).

Original language	English
Article number	7094237
Pages (from-to)	591-593
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	36
Issue number	6
DOIs	https://doi.org/10.1109/LED.2015.2426197
Publication status	Published - 1 Jun 2015

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

Keywords

Fin p-body
Miller capacitance
gate charge
insulated gate bipolar transistor (IGBT)
wide trench

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10.1109/LED.2015.2426197

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title = "A new fin p-body insulated gate bipolar transistor with low miller capacitance",

abstract = "A new fin p-body insulated gate bipolar transistor (Fin-p IGBT) is designed and experimentally demonstrated. The device features wide trenches and spacer gates, which is implemented using a simple and low-cost process. Compared with the conventional floating p-body IGBT, the fabricated Fin-p IGBT is able to achieve remarkable reduction in both Miller capacitance (-60\% at VCE of 15 V) and gate charge (-46\%).",

keywords = "Fin p-body, Miller capacitance, gate charge, insulated gate bipolar transistor (IGBT), wide trench",

author = "Hao Feng and Wentao Yang and Yuichi Onozawa and Takashi Yoshimura and Akira Tamenori and Sin, \{Johnny K.O.\}",

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AU - Feng, Hao

AU - Yang, Wentao

AU - Onozawa, Yuichi

AU - Yoshimura, Takashi

AU - Tamenori, Akira

AU - Sin, Johnny K.O.

PY - 2015/6/1

Y1 - 2015/6/1

N2 - A new fin p-body insulated gate bipolar transistor (Fin-p IGBT) is designed and experimentally demonstrated. The device features wide trenches and spacer gates, which is implemented using a simple and low-cost process. Compared with the conventional floating p-body IGBT, the fabricated Fin-p IGBT is able to achieve remarkable reduction in both Miller capacitance (-60% at VCE of 15 V) and gate charge (-46%).

AB - A new fin p-body insulated gate bipolar transistor (Fin-p IGBT) is designed and experimentally demonstrated. The device features wide trenches and spacer gates, which is implemented using a simple and low-cost process. Compared with the conventional floating p-body IGBT, the fabricated Fin-p IGBT is able to achieve remarkable reduction in both Miller capacitance (-60% at VCE of 15 V) and gate charge (-46%).

KW - Fin p-body

KW - Miller capacitance

KW - gate charge

KW - insulated gate bipolar transistor (IGBT)

KW - wide trench

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UR - https://openalex.org/W2099539087

U2 - 10.1109/LED.2015.2426197

DO - 10.1109/LED.2015.2426197

M3 - Journal Article

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EP - 593

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 6

M1 - 7094237

ER -

A new fin p-body insulated gate bipolar transistor with low miller capacitance

Abstract

Bibliographical note

Keywords

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