A novel high performance stacked LDD RF LDMOSFET

Jun Cai; Changhong Ren; N. Balasubramanian; Johnny K.O. Sin

doi:10.1109/55.919240

A novel high performance stacked LDD RF LDMOSFET

Jun Cai^*, Changhong Ren, N. Balasubramanian, Johnny K.O. Sin

^*Corresponding author for this work

Department of Electronic and Computer Engineering

Research output: Contribution to journal › Journal Article › peer-review

21 Citations (Scopus)

Abstract

A novel silicon RF lateral double-diffused metal oxide semiconductor field effect transistor (LDMOSFET) structure, using a simple yet effective concept of stacked lightly doped drain (LDD), is proposed. The stacked layers of LDD minimizes the on-state resistance of the transistor due to the n+ doping used in the top LDD layer, and also raises the device breakdown voltage due to the charge compensation in the composite LDD region. Therefore, for the same blocking voltage rating, the stacked LDD structure allows the LDMOSFET to have a higher current handling capability. This in turn causes the transconductance Gm to be higher, leading to higher RF performance for the power device. Measured results show that a 67% improvement in I_dsat and a 16% improvement in forward blocking voltage are obtained. Furthermore, the new device achieves an increase in transconductance of 145% and improves cut-off frequency by 108% at a gate voltage of 10 V.

Original language	English
Pages (from-to)	236-238
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	22
Issue number	5
DOIs	https://doi.org/10.1109/55.919240
Publication status	Published - May 2001

Keywords

Charge compensation
LDMOS transistor
Power transistors
RF
Stacked LDD

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10.1109/55.919240

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title = "A novel high performance stacked LDD RF LDMOSFET",

abstract = "A novel silicon RF lateral double-diffused metal oxide semiconductor field effect transistor (LDMOSFET) structure, using a simple yet effective concept of stacked lightly doped drain (LDD), is proposed. The stacked layers of LDD minimizes the on-state resistance of the transistor due to the n+ doping used in the top LDD layer, and also raises the device breakdown voltage due to the charge compensation in the composite LDD region. Therefore, for the same blocking voltage rating, the stacked LDD structure allows the LDMOSFET to have a higher current handling capability. This in turn causes the transconductance Gm to be higher, leading to higher RF performance for the power device. Measured results show that a 67\% improvement in Idsat and a 16\% improvement in forward blocking voltage are obtained. Furthermore, the new device achieves an increase in transconductance of 145\% and improves cut-off frequency by 108\% at a gate voltage of 10 V.",

keywords = "Charge compensation, LDMOS transistor, Power transistors, RF, Stacked LDD",

author = "Jun Cai and Changhong Ren and N. Balasubramanian and Sin, \{Johnny K.O.\}",

year = "2001",

month = may,

doi = "10.1109/55.919240",

language = "English",

volume = "22",

pages = "236--238",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - A novel high performance stacked LDD RF LDMOSFET

AU - Cai, Jun

AU - Ren, Changhong

AU - Balasubramanian, N.

AU - Sin, Johnny K.O.

PY - 2001/5

Y1 - 2001/5

N2 - A novel silicon RF lateral double-diffused metal oxide semiconductor field effect transistor (LDMOSFET) structure, using a simple yet effective concept of stacked lightly doped drain (LDD), is proposed. The stacked layers of LDD minimizes the on-state resistance of the transistor due to the n+ doping used in the top LDD layer, and also raises the device breakdown voltage due to the charge compensation in the composite LDD region. Therefore, for the same blocking voltage rating, the stacked LDD structure allows the LDMOSFET to have a higher current handling capability. This in turn causes the transconductance Gm to be higher, leading to higher RF performance for the power device. Measured results show that a 67% improvement in Idsat and a 16% improvement in forward blocking voltage are obtained. Furthermore, the new device achieves an increase in transconductance of 145% and improves cut-off frequency by 108% at a gate voltage of 10 V.

AB - A novel silicon RF lateral double-diffused metal oxide semiconductor field effect transistor (LDMOSFET) structure, using a simple yet effective concept of stacked lightly doped drain (LDD), is proposed. The stacked layers of LDD minimizes the on-state resistance of the transistor due to the n+ doping used in the top LDD layer, and also raises the device breakdown voltage due to the charge compensation in the composite LDD region. Therefore, for the same blocking voltage rating, the stacked LDD structure allows the LDMOSFET to have a higher current handling capability. This in turn causes the transconductance Gm to be higher, leading to higher RF performance for the power device. Measured results show that a 67% improvement in Idsat and a 16% improvement in forward blocking voltage are obtained. Furthermore, the new device achieves an increase in transconductance of 145% and improves cut-off frequency by 108% at a gate voltage of 10 V.

KW - Charge compensation

KW - LDMOS transistor

KW - Power transistors

KW - RF

KW - Stacked LDD

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UR - https://openalex.org/W2126710060

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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ER -

A novel high performance stacked LDD RF LDMOSFET

Abstract

Keywords

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