@inproceedings{54d45b01983b4b10a75d3d03b9219e21,
title = "A novel RF high-Q metal-semiconductor-metal planar inter-digitated varactor based on double-channel AlGaN/GaN HEMT structure",
abstract = "A novel GaN-based Double-Channel Metal-Semiconductor-Metal Configuration Planar Inter-Digitated varactor fabricated with HEMT compatible process is presented. Our varactors achieved high Q-factor, wide tuning range and high minimun Q-factor (Qmin). The double-channel heterostructure extends the useful high Q-factor capacitance tuning range of the varactors. The operation of the varactor is explained by a physical equivalent circuit, in which the whole changing trend of extracted Q-factors over bias voltage and extracted resistance can be explained. The measurement results of the novel double-channel varactors are compared with the varactors facbricated on single channel heterostructure in order to show its superior performances.",
keywords = "AlGaN/GaN, C-V, Double channel, Equivalent circuit, Q-factor, Schottky contacts, Varactor",
author = "Chu, \{Chun San\} and Yugang Zhou and Chen, \{Kevin J.\} and Lau, \{Kei May\}",
year = "2005",
doi = "10.1109/RFIC.2005.1489819",
language = "English",
isbn = "0780389832",
series = "Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium",
pages = "385--388",
editor = "A. Jerng",
booktitle = "2005 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Digest of Papers",
note = "2005 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Digest of Papers ; Conference date: 12-06-2005 Through 14-06-2005",
}