A novel self-aligned offset-gated polysilicon TFT using high-κ dielectric spacers

Zhibin Xiong; Haitao Liu; Chunxiang Zhu; Johnny K.O. Sin

doi:10.1109/LED.2004.825206

A novel self-aligned offset-gated polysilicon TFT using high-κ dielectric spacers

Zhibin Xiong^*
, Haitao Liu
, Chunxiang Zhu
, Johnny K.O. Sin

^*Corresponding author for this work

Department of Electronic and Computer Engineering

Research output: Contribution to journal › Letter › peer-review

19 Citations (Scopus)

Abstract

In this letter, a novel self-aligned offset-gated Poly-Si thin-film transistor (TFT) using high-κ dielectric Hafnium oxide (HfO₂) spacers is proposed and demonstrated. The HfO₂ film is deposited by magnetron sputter deposition, and the HfO₂ spacers are formed by reactive ion etching. The permittivity of the deposited HfO₂ is approximately 20. Experimental results show that with the high vertical field induced underneath the high-κ spacers, an inversion layer is formed, and it effectively increases the on-state current while still maintaining a low leakage current in the off-state, compared to the conventional lightly doped drain or oxide spacer TFTs. The on-state current in the offset-gated Poly-Si TFT using the HfO₂ spacers is approximately two times higher than that of the conventional oxide spacer TFT.

Original language	English
Pages (from-to)	194-195
Number of pages	2
Journal	IEEE Electron Device Letters
Volume	25
Issue number	4
DOIs	https://doi.org/10.1109/LED.2004.825206
Publication status	Published - Apr 2004

Keywords

High-κ dielectric spacer
Offset-gated
Polysilicon thin-film transistors (Poly-Si TFTs)
Self-aligned

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10.1109/LED.2004.825206

Cite this

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title = "A novel self-aligned offset-gated polysilicon TFT using high-κ dielectric spacers",

abstract = "In this letter, a novel self-aligned offset-gated Poly-Si thin-film transistor (TFT) using high-κ dielectric Hafnium oxide (HfO2) spacers is proposed and demonstrated. The HfO2 film is deposited by magnetron sputter deposition, and the HfO2 spacers are formed by reactive ion etching. The permittivity of the deposited HfO2 is approximately 20. Experimental results show that with the high vertical field induced underneath the high-κ spacers, an inversion layer is formed, and it effectively increases the on-state current while still maintaining a low leakage current in the off-state, compared to the conventional lightly doped drain or oxide spacer TFTs. The on-state current in the offset-gated Poly-Si TFT using the HfO2 spacers is approximately two times higher than that of the conventional oxide spacer TFT.",

keywords = "High-κ dielectric spacer, Offset-gated, Polysilicon thin-film transistors (Poly-Si TFTs), Self-aligned",

author = "Zhibin Xiong and Haitao Liu and Chunxiang Zhu and Sin, \{Johnny K.O.\}",

year = "2004",

month = apr,

doi = "10.1109/LED.2004.825206",

language = "English",

volume = "25",

pages = "194--195",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

}

TY - JOUR

T1 - A novel self-aligned offset-gated polysilicon TFT using high-κ dielectric spacers

AU - Xiong, Zhibin

AU - Liu, Haitao

AU - Zhu, Chunxiang

AU - Sin, Johnny K.O.

PY - 2004/4

Y1 - 2004/4

N2 - In this letter, a novel self-aligned offset-gated Poly-Si thin-film transistor (TFT) using high-κ dielectric Hafnium oxide (HfO2) spacers is proposed and demonstrated. The HfO2 film is deposited by magnetron sputter deposition, and the HfO2 spacers are formed by reactive ion etching. The permittivity of the deposited HfO2 is approximately 20. Experimental results show that with the high vertical field induced underneath the high-κ spacers, an inversion layer is formed, and it effectively increases the on-state current while still maintaining a low leakage current in the off-state, compared to the conventional lightly doped drain or oxide spacer TFTs. The on-state current in the offset-gated Poly-Si TFT using the HfO2 spacers is approximately two times higher than that of the conventional oxide spacer TFT.

AB - In this letter, a novel self-aligned offset-gated Poly-Si thin-film transistor (TFT) using high-κ dielectric Hafnium oxide (HfO2) spacers is proposed and demonstrated. The HfO2 film is deposited by magnetron sputter deposition, and the HfO2 spacers are formed by reactive ion etching. The permittivity of the deposited HfO2 is approximately 20. Experimental results show that with the high vertical field induced underneath the high-κ spacers, an inversion layer is formed, and it effectively increases the on-state current while still maintaining a low leakage current in the off-state, compared to the conventional lightly doped drain or oxide spacer TFTs. The on-state current in the offset-gated Poly-Si TFT using the HfO2 spacers is approximately two times higher than that of the conventional oxide spacer TFT.

KW - High-κ dielectric spacer

KW - Offset-gated

KW - Polysilicon thin-film transistors (Poly-Si TFTs)

KW - Self-aligned

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:000220478000012

UR - https://openalex.org/W1927892413

U2 - 10.1109/LED.2004.825206

DO - 10.1109/LED.2004.825206

M3 - Letter

SN - 0741-3106

VL - 25

SP - 194

EP - 195

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 4

ER -

A novel self-aligned offset-gated polysilicon TFT using high-κ dielectric spacers

Abstract

Keywords

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