A novel SONOS gate power MOSFET with excellent UIS capability

Xianda Zhou; Jacky C.W. Ng; Johnny K.O. Sin

doi:10.1109/LED.2011.2158059

A novel SONOS gate power MOSFET with excellent UIS capability

Xianda Zhou^*
, Jacky C.W. Ng
, Johnny K.O. Sin

^*Corresponding author for this work

Department of Electronic and Computer Engineering

Research output: Contribution to journal › Journal Article › peer-review

8 Citations (Scopus)

Abstract

A novel silicon-oxide-nitride-oxide-silicon gate power MOSFET is proposed and experimentally demonstrated. In the novel device, the doping concentration of the p-body is increased by an order of magnitude compared to that of the conventional power MOSFET. However, the positive shift of the threshold voltage due to the heavily doped p-body is fully compensated by the positive fixed charges preprogrammed in the silicon nitride of the oxide-nitride-oxide gate dielectric. As a result, a normal threshold voltage can be obtained, and the avalanche energy absorption of the novel device at unclamped inductive switching is 5.2 times that of the conventional power MOSFET.

Original language	English
Article number	5982080
Pages (from-to)	1415-1417
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	32
Issue number	10
DOIs	https://doi.org/10.1109/LED.2011.2158059
Publication status	Published - Oct 2011

Keywords

Avalanche energy
power MOSFET
silicon-oxide-nitride-oxide-silicon (SONOS)
threshold voltage
unclamped inductive switching (UIS)

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10.1109/LED.2011.2158059

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title = "A novel SONOS gate power MOSFET with excellent UIS capability",

abstract = "A novel silicon-oxide-nitride-oxide-silicon gate power MOSFET is proposed and experimentally demonstrated. In the novel device, the doping concentration of the p-body is increased by an order of magnitude compared to that of the conventional power MOSFET. However, the positive shift of the threshold voltage due to the heavily doped p-body is fully compensated by the positive fixed charges preprogrammed in the silicon nitride of the oxide-nitride-oxide gate dielectric. As a result, a normal threshold voltage can be obtained, and the avalanche energy absorption of the novel device at unclamped inductive switching is 5.2 times that of the conventional power MOSFET.",

keywords = "Avalanche energy, power MOSFET, silicon-oxide-nitride-oxide-silicon (SONOS), threshold voltage, unclamped inductive switching (UIS)",

author = "Xianda Zhou and Ng, \{Jacky C.W.\} and Sin, \{Johnny K.O.\}",

year = "2011",

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doi = "10.1109/LED.2011.2158059",

language = "English",

volume = "32",

pages = "1415--1417",

journal = "IEEE Electron Device Letters",

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T1 - A novel SONOS gate power MOSFET with excellent UIS capability

AU - Zhou, Xianda

AU - Ng, Jacky C.W.

AU - Sin, Johnny K.O.

PY - 2011/10

Y1 - 2011/10

N2 - A novel silicon-oxide-nitride-oxide-silicon gate power MOSFET is proposed and experimentally demonstrated. In the novel device, the doping concentration of the p-body is increased by an order of magnitude compared to that of the conventional power MOSFET. However, the positive shift of the threshold voltage due to the heavily doped p-body is fully compensated by the positive fixed charges preprogrammed in the silicon nitride of the oxide-nitride-oxide gate dielectric. As a result, a normal threshold voltage can be obtained, and the avalanche energy absorption of the novel device at unclamped inductive switching is 5.2 times that of the conventional power MOSFET.

AB - A novel silicon-oxide-nitride-oxide-silicon gate power MOSFET is proposed and experimentally demonstrated. In the novel device, the doping concentration of the p-body is increased by an order of magnitude compared to that of the conventional power MOSFET. However, the positive shift of the threshold voltage due to the heavily doped p-body is fully compensated by the positive fixed charges preprogrammed in the silicon nitride of the oxide-nitride-oxide gate dielectric. As a result, a normal threshold voltage can be obtained, and the avalanche energy absorption of the novel device at unclamped inductive switching is 5.2 times that of the conventional power MOSFET.

KW - Avalanche energy

KW - power MOSFET

KW - silicon-oxide-nitride-oxide-silicon (SONOS)

KW - threshold voltage

KW - unclamped inductive switching (UIS)

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UR - https://openalex.org/W2159822962

U2 - 10.1109/LED.2011.2158059

DO - 10.1109/LED.2011.2158059

M3 - Journal Article

SN - 0741-3106

VL - 32

SP - 1415

EP - 1417

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 10

M1 - 5982080

ER -

A novel SONOS gate power MOSFET with excellent UIS capability

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Keywords

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