A One-Transistor Active Pixel Sensor Formed by A Vertical Photodiode-Gated Low-Temperature Polysilicon Thin-Film Transistor

Kai Wang; Xianda Zhou; Meng Zhang; Yitong Xu; Man Wong; Hoi Sing Kwok

doi:10.1109/EDSSC.2018.8487133

A One-Transistor Active Pixel Sensor Formed by A Vertical Photodiode-Gated Low-Temperature Polysilicon Thin-Film Transistor

Kai Wang, Xianda Zhou, Meng Zhang, Yitong Xu, Man Wong, Hoi Sing Kwok

Department of Electronic and Computer Engineering

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

1 Citation (Scopus)

Abstract

We report a compact hybrid optical sensor by vertically integrating an a-Si:H photodiode and a low-temperature polysilicon (LTPS) thin-film transistor (TFT). Such a photodiode-gated LTPS TFT combines sensing, storage, and readout switch functions and also has an internal photoconductive gain, resulting in a one-transistor active pixel sensor intended for high-resolution and high-sensitivity large-area imaging.

Original language	English
Title of host publication	2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781538662342
DOIs	https://doi.org/10.1109/EDSSC.2018.8487133
Publication status	Published - 9 Oct 2018
Event	2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018 - Shenzhen, China Duration: 6 Jun 2018 → 8 Jun 2018

Publication series

Name	2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018

Conference

Conference	2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018
Country/Territory	China
City	Shenzhen
Period	6/06/18 → 8/06/18

Bibliographical note

Publisher Copyright:
© 2018 IEEE.

Keywords

Active Pixel Sensor
LTPS TFT
Photoconductive gain
Photodiode

Access to Document

10.1109/EDSSC.2018.8487133

Cite this

Wang, K., Zhou, X., Zhang, M., Xu, Y., Wong, M., & Kwok, H. S. (2018). A One-Transistor Active Pixel Sensor Formed by A Vertical Photodiode-Gated Low-Temperature Polysilicon Thin-Film Transistor. In 2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018 Article 8487133 (2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDSSC.2018.8487133

Wang, Kai ; Zhou, Xianda ; Zhang, Meng et al. / A One-Transistor Active Pixel Sensor Formed by A Vertical Photodiode-Gated Low-Temperature Polysilicon Thin-Film Transistor. 2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. (2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018).

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title = "A One-Transistor Active Pixel Sensor Formed by A Vertical Photodiode-Gated Low-Temperature Polysilicon Thin-Film Transistor",

abstract = "We report a compact hybrid optical sensor by vertically integrating an a-Si:H photodiode and a low-temperature polysilicon (LTPS) thin-film transistor (TFT). Such a photodiode-gated LTPS TFT combines sensing, storage, and readout switch functions and also has an internal photoconductive gain, resulting in a one-transistor active pixel sensor intended for high-resolution and high-sensitivity large-area imaging.",

keywords = "Active Pixel Sensor, LTPS TFT, Photoconductive gain, Photodiode",

author = "Kai Wang and Xianda Zhou and Meng Zhang and Yitong Xu and Man Wong and Kwok, \{Hoi Sing\}",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018 ; Conference date: 06-06-2018 Through 08-06-2018",

year = "2018",

month = oct,

day = "9",

doi = "10.1109/EDSSC.2018.8487133",

language = "English",

series = "2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018",

}

Wang, K, Zhou, X, Zhang, M, Xu, Y, Wong, M & Kwok, HS 2018, A One-Transistor Active Pixel Sensor Formed by A Vertical Photodiode-Gated Low-Temperature Polysilicon Thin-Film Transistor. in 2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018., 8487133, 2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018, Institute of Electrical and Electronics Engineers Inc., 2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018, Shenzhen, China, 6/06/18. https://doi.org/10.1109/EDSSC.2018.8487133

A One-Transistor Active Pixel Sensor Formed by A Vertical Photodiode-Gated Low-Temperature Polysilicon Thin-Film Transistor. / Wang, Kai; Zhou, Xianda; Zhang, Meng et al.
2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. 8487133 (2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018).

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

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T1 - A One-Transistor Active Pixel Sensor Formed by A Vertical Photodiode-Gated Low-Temperature Polysilicon Thin-Film Transistor

AU - Wang, Kai

AU - Zhou, Xianda

AU - Zhang, Meng

AU - Xu, Yitong

AU - Wong, Man

AU - Kwok, Hoi Sing

PY - 2018/10/9

Y1 - 2018/10/9

N2 - We report a compact hybrid optical sensor by vertically integrating an a-Si:H photodiode and a low-temperature polysilicon (LTPS) thin-film transistor (TFT). Such a photodiode-gated LTPS TFT combines sensing, storage, and readout switch functions and also has an internal photoconductive gain, resulting in a one-transistor active pixel sensor intended for high-resolution and high-sensitivity large-area imaging.

AB - We report a compact hybrid optical sensor by vertically integrating an a-Si:H photodiode and a low-temperature polysilicon (LTPS) thin-film transistor (TFT). Such a photodiode-gated LTPS TFT combines sensing, storage, and readout switch functions and also has an internal photoconductive gain, resulting in a one-transistor active pixel sensor intended for high-resolution and high-sensitivity large-area imaging.

KW - Active Pixel Sensor

KW - LTPS TFT

KW - Photoconductive gain

KW - Photodiode

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UR - https://www.scopus.com/pages/publications/85056299797

U2 - 10.1109/EDSSC.2018.8487133

DO - 10.1109/EDSSC.2018.8487133

M3 - Conference Paper published in a book

T3 - 2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018

BT - 2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018

Y2 - 6 June 2018 through 8 June 2018

ER -

Wang K, Zhou X, Zhang M, Xu Y, Wong M, Kwok HS. A One-Transistor Active Pixel Sensor Formed by A Vertical Photodiode-Gated Low-Temperature Polysilicon Thin-Film Transistor. In 2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018. Institute of Electrical and Electronics Engineers Inc. 2018. 8487133. (2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018). doi: 10.1109/EDSSC.2018.8487133

A One-Transistor Active Pixel Sensor Formed by A Vertical Photodiode-Gated Low-Temperature Polysilicon Thin-Film Transistor

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Keywords

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