Abstract
A physics-based analytic solution to the surface potential from the accumulation to the strong-inversion region has been derived from the complete MOSFET surface potential equation in this paper without any need for smooth functions or simplification by dropping some second-order related terms. Its high accuracy in predicting the surface potential and the transcapacitance under various bias conditions has also been verified by a comparison with the numerical results. The explicit surface-potential solution not only leads to a more clear understanding of MOSFET device physics but also provides a better platform to develop the advanced surface potential-based model for the circuit simulation.
| Original language | English |
|---|---|
| Pages (from-to) | 2008-2016 |
| Number of pages | 9 |
| Journal | IEEE Transactions on Electron Devices |
| Volume | 53 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - Sept 2006 |
Keywords
- Analytic solution
- Compact modeling
- MOSFETs
- Surface potential
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