A Physics-Based MOSFET Noise Model for Circuit Simulators

Kwok K. Hung; Ping K. Ko; Chenming Hu; Yiu C. Cheng

doi:10.1109/16.108195

A Physics-Based MOSFET Noise Model for Circuit Simulators

Kwok K. Hung^*, Ping K. Ko, Chenming Hu, Yiu C. Cheng

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

236 Citations (Scopus)

Abstract

A physics-based MOSFET noise model that can accurately predict the noise characteristics over the linear, saturation, and subthreshold operating regions but is still simple enough to be implemented in any general-purpose circuit simulator has been developed. Expressions for the flicker noise power are derived on the basis of a theory that incorporates both the oxide-trap-induced carrier number and correlated surface mobility fluctuation mechanisms. The model is applicable to long-channel, as well as submicron n-and p-channel MOSFET’s fabricated by different technologies, and all the model parameters can be easily extracted from routine I–V and noise measurements.

Original language	English
Pages (from-to)	1323-1333
Number of pages	11
Journal	IEEE Transactions on Electron Devices
Volume	37
Issue number	5
DOIs	https://doi.org/10.1109/16.108195
Publication status	Published - May 1990
Externally published	Yes

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title = "A Physics-Based MOSFET Noise Model for Circuit Simulators",

abstract = "A physics-based MOSFET noise model that can accurately predict the noise characteristics over the linear, saturation, and subthreshold operating regions but is still simple enough to be implemented in any general-purpose circuit simulator has been developed. Expressions for the flicker noise power are derived on the basis of a theory that incorporates both the oxide-trap-induced carrier number and correlated surface mobility fluctuation mechanisms. The model is applicable to long-channel, as well as submicron n-and p-channel MOSFET{\textquoteright}s fabricated by different technologies, and all the model parameters can be easily extracted from routine I–V and noise measurements.",

author = "Hung, \{Kwok K.\} and Ko, \{Ping K.\} and Chenming Hu and Cheng, \{Yiu C.\}",

year = "1990",

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AB - A physics-based MOSFET noise model that can accurately predict the noise characteristics over the linear, saturation, and subthreshold operating regions but is still simple enough to be implemented in any general-purpose circuit simulator has been developed. Expressions for the flicker noise power are derived on the basis of a theory that incorporates both the oxide-trap-induced carrier number and correlated surface mobility fluctuation mechanisms. The model is applicable to long-channel, as well as submicron n-and p-channel MOSFET’s fabricated by different technologies, and all the model parameters can be easily extracted from routine I–V and noise measurements.

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A Physics-Based MOSFET Noise Model for Circuit Simulators

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