A Robust and Efficient Compact Model for Phase-Change Memory Circuit Simulations

Xuhui Chen; Feilong Ding; Xiaoqing Huang; Xinnan Lin; Runsheng Wang; Mansun Chan; Lining Zhang; Ru Huang

doi:10.1109/TED.2021.3098656

A Robust and Efficient Compact Model for Phase-Change Memory Circuit Simulations

Xuhui Chen, Feilong Ding, Xiaoqing Huang, Xinnan Lin, Runsheng Wang, Mansun Chan, Lining Zhang^*, Ru Huang

^*Corresponding author for this work

Department of Electronic and Computer Engineering

Research output: Contribution to journal › Journal Article › peer-review

8 Citations (Scopus)

Abstract

A phase-change memory (PCM) model for robust and efficient simulations of circuits including neuromorphic ones is reported in this work. The features of a hysteretic dynamic resistance in the voltage domain, and the incubation in the crystallization, are covered in the model. The Landau-Khalatnikov (LK)-type equation for ferroelectric is used to develop the PCM hysteresis module. A voltage-controlled relaxation oscillation is successfully simulated for the Ge2Sb2Te5 (GST) PCM. A technique of direct evaluation (DE) is then developed to reformulate the PCM model without any internal node. A significant enhancement of simulation efficiency is achieved compared with the traditional approach without sacrificing the accuracy. The functional correctness of the PCM device model and the acceleration effect in circuit simulations are verified.

Original language	English
Article number	9497341
Pages (from-to)	4404-4410
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	68
Issue number	9
DOIs	https://doi.org/10.1109/TED.2021.3098656
Publication status	Published - Sept 2021

Bibliographical note

Publisher Copyright:
© 1963-2012 IEEE.

Keywords

Crystal fraction
filament
modeling method
phase-change memory (PCM)
simulation acceleration
subcircuits
temperature

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abstract = "A phase-change memory (PCM) model for robust and efficient simulations of circuits including neuromorphic ones is reported in this work. The features of a hysteretic dynamic resistance in the voltage domain, and the incubation in the crystallization, are covered in the model. The Landau-Khalatnikov (LK)-type equation for ferroelectric is used to develop the PCM hysteresis module. A voltage-controlled relaxation oscillation is successfully simulated for the Ge2Sb2Te5 (GST) PCM. A technique of direct evaluation (DE) is then developed to reformulate the PCM model without any internal node. A significant enhancement of simulation efficiency is achieved compared with the traditional approach without sacrificing the accuracy. The functional correctness of the PCM device model and the acceleration effect in circuit simulations are verified.",

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AU - Ding, Feilong

AU - Huang, Xiaoqing

AU - Lin, Xinnan

AU - Wang, Runsheng

AU - Chan, Mansun

AU - Zhang, Lining

AU - Huang, Ru

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AB - A phase-change memory (PCM) model for robust and efficient simulations of circuits including neuromorphic ones is reported in this work. The features of a hysteretic dynamic resistance in the voltage domain, and the incubation in the crystallization, are covered in the model. The Landau-Khalatnikov (LK)-type equation for ferroelectric is used to develop the PCM hysteresis module. A voltage-controlled relaxation oscillation is successfully simulated for the Ge2Sb2Te5 (GST) PCM. A technique of direct evaluation (DE) is then developed to reformulate the PCM model without any internal node. A significant enhancement of simulation efficiency is achieved compared with the traditional approach without sacrificing the accuracy. The functional correctness of the PCM device model and the acceleration effect in circuit simulations are verified.

KW - Crystal fraction

KW - filament

KW - modeling method

KW - phase-change memory (PCM)

KW - simulation acceleration

KW - subcircuits

KW - temperature

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JF - IEEE Transactions on Electron Devices

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M1 - 9497341

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A Robust and Efficient Compact Model for Phase-Change Memory Circuit Simulations

Abstract

Bibliographical note

Keywords

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