A self-aligned bottom gate poly-Si TFT technology

Shengdong Zhang; Ruqi Han; Mansun Chan

doi:10.1109/ESSDERC.2001.195304

A self-aligned bottom gate poly-Si TFT technology

Shengdong Zhang^*, Ruqi Han, Mansun Chan

^*Corresponding author for this work

Department of Electronic and Computer Engineering

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

Abstract

A novel self-aligned bottom gate thin film transistor (SABG-TFT) technology with grain enhancement by Metal-Induced- Lateral Crystallization (MILC) is proposed and experimentally demonstrated for the first time. The unique feature of the technology is the formation of self-aligned and symmetrical lightly doped source/drain (LDD) structure without any additional photolithographic or implantation step. Moreover, devices formed by the proposed method have thick source/drain and a thin channel region for providing low source/drain resistance. The process is demonstrated by P-channel TFTs fabricated at low temperature (≤600 °C), which exhibits symmetrical transfer characteristics. The effective mobility and on-off current ratio of the devices are about 35 cm²/V-s and 6 × 10⁶ respectively.

Original language	English
Title of host publication	European Solid-State Device Research Conference
Editors	Heiner Ryssel, Gerhard Wachutka, Herbert Grunbacher
Publisher	IEEE Computer Society
Pages	475-478
Number of pages	4
ISBN (Electronic)	2914601018
DOIs	https://doi.org/10.1109/ESSDERC.2001.195304
Publication status	Published - 2001
Event	31st European Solid-State Device Research Conference, ESSDERC 2001 - Nuremberg, Germany Duration: 11 Sept 2001 → 13 Sept 2001

Publication series

Name	European Solid-State Device Research Conference
ISSN (Print)	1930-8876

Conference

Conference	31st European Solid-State Device Research Conference, ESSDERC 2001
Country/Territory	Germany
City	Nuremberg
Period	11/09/01 → 13/09/01

Bibliographical note

Publisher Copyright:
© 2001 Non IEEE.

Access to Document

10.1109/ESSDERC.2001.195304

Cite this

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title = "A self-aligned bottom gate poly-Si TFT technology",

abstract = "A novel self-aligned bottom gate thin film transistor (SABG-TFT) technology with grain enhancement by Metal-Induced- Lateral Crystallization (MILC) is proposed and experimentally demonstrated for the first time. The unique feature of the technology is the formation of self-aligned and symmetrical lightly doped source/drain (LDD) structure without any additional photolithographic or implantation step. Moreover, devices formed by the proposed method have thick source/drain and a thin channel region for providing low source/drain resistance. The process is demonstrated by P-channel TFTs fabricated at low temperature (≤600 °C), which exhibits symmetrical transfer characteristics. The effective mobility and on-off current ratio of the devices are about 35 cm2/V-s and 6 × 106 respectively.",

author = "Shengdong Zhang and Ruqi Han and Mansun Chan",

note = "Publisher Copyright: {\textcopyright} 2001 Non IEEE.; 31st European Solid-State Device Research Conference, ESSDERC 2001 ; Conference date: 11-09-2001 Through 13-09-2001",

year = "2001",

doi = "10.1109/ESSDERC.2001.195304",

language = "English",

series = "European Solid-State Device Research Conference",

publisher = "IEEE Computer Society",

pages = "475--478",

editor = "Heiner Ryssel and Gerhard Wachutka and Herbert Grunbacher",

booktitle = "European Solid-State Device Research Conference",

}

Zhang, S, Han, R & Chan, M 2001, A self-aligned bottom gate poly-Si TFT technology. in H Ryssel, G Wachutka & H Grunbacher (eds), European Solid-State Device Research Conference. European Solid-State Device Research Conference, IEEE Computer Society, pp. 475-478, 31st European Solid-State Device Research Conference, ESSDERC 2001, Nuremberg, Germany, 11/09/01. https://doi.org/10.1109/ESSDERC.2001.195304

A self-aligned bottom gate poly-Si TFT technology. / Zhang, Shengdong; Han, Ruqi; Chan, Mansun.
European Solid-State Device Research Conference. ed. / Heiner Ryssel; Gerhard Wachutka; Herbert Grunbacher. IEEE Computer Society, 2001. p. 475-478 (European Solid-State Device Research Conference).

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

TY - GEN

T1 - A self-aligned bottom gate poly-Si TFT technology

AU - Zhang, Shengdong

AU - Han, Ruqi

AU - Chan, Mansun

PY - 2001

Y1 - 2001

N2 - A novel self-aligned bottom gate thin film transistor (SABG-TFT) technology with grain enhancement by Metal-Induced- Lateral Crystallization (MILC) is proposed and experimentally demonstrated for the first time. The unique feature of the technology is the formation of self-aligned and symmetrical lightly doped source/drain (LDD) structure without any additional photolithographic or implantation step. Moreover, devices formed by the proposed method have thick source/drain and a thin channel region for providing low source/drain resistance. The process is demonstrated by P-channel TFTs fabricated at low temperature (≤600 °C), which exhibits symmetrical transfer characteristics. The effective mobility and on-off current ratio of the devices are about 35 cm2/V-s and 6 × 106 respectively.

AB - A novel self-aligned bottom gate thin film transistor (SABG-TFT) technology with grain enhancement by Metal-Induced- Lateral Crystallization (MILC) is proposed and experimentally demonstrated for the first time. The unique feature of the technology is the formation of self-aligned and symmetrical lightly doped source/drain (LDD) structure without any additional photolithographic or implantation step. Moreover, devices formed by the proposed method have thick source/drain and a thin channel region for providing low source/drain resistance. The process is demonstrated by P-channel TFTs fabricated at low temperature (≤600 °C), which exhibits symmetrical transfer characteristics. The effective mobility and on-off current ratio of the devices are about 35 cm2/V-s and 6 × 106 respectively.

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UR - https://www.scopus.com/pages/publications/84907519406

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BT - European Solid-State Device Research Conference

A2 - Ryssel, Heiner

A2 - Wachutka, Gerhard

A2 - Grunbacher, Herbert

PB - IEEE Computer Society

T2 - 31st European Solid-State Device Research Conference, ESSDERC 2001

Y2 - 11 September 2001 through 13 September 2001

ER -

A self-aligned bottom gate poly-Si TFT technology

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