A Self-Aligned Gate-All-Around MOS Transistor on Single-Grain Silicon

A self-aligned gate-all-around metal-oxide-semiconductor (MOS) transistor technology is proposed and demonstrated. The self-aligned structure is realized by first forming two dummy gates self-aligned to each other, and then replacing them with a real poly-Si gate. The self-aligned gate-all-around transistor is fabricated on a single grain of silicon film. The metal-induced unilateral crystallization technique and subsequent high-temperature annealing are combined to achieve the single grain silicon. The implementation of the self-aligned structure and large size of single-grain silicon is visualized using scanning electron microscopy imaging. Measurement results show that the performance of the fabricated gate-all-around transistor is highly comparable to that of a conventional single-crystal transistor, indicating the successful formation of the single-grain transistor. (C) 2004 The Electrochemical Society.