A Self-Aligned Trenched Cathode Lateral Insulated Gate Bipolar Transistor with High Latch-Up Resistance

Philip K.T. Mok; Azzouz Nezar; C. André T. Salama

doi:10.1109/16.477786

A Self-Aligned Trenched Cathode Lateral Insulated Gate Bipolar Transistor with High Latch-Up Resistance

Philip K.T. Mok, Azzouz Nezar, C. André T. Salama

Research output: Contribution to journal › Journal Article › peer-review

4 Citations (Scopus)

Abstract

This paper discusses a modified insulated gate bipolar transistor (LIGBT) structure using a self-aligned trenched contact at the cathode of the device which significantly reduces the parasitic p-base resistance underneath the n+ cathode region to suppress the latch-up. The trenched cathode LIGBT (TC-LIGBT) structure is BiCMOS compatible and the LIGBT's with latching current densities over 1200 A/cm2 have been obtained using a 4 µm technology.

Original language	English
Pages (from-to)	2236-2239
Number of pages	4
Journal	IEEE Transactions on Electron Devices
Volume	42
Issue number	12
DOIs	https://doi.org/10.1109/16.477786
Publication status	Published - Dec 1995
Externally published	Yes

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title = "A Self-Aligned Trenched Cathode Lateral Insulated Gate Bipolar Transistor with High Latch-Up Resistance",

abstract = "This paper discusses a modified insulated gate bipolar transistor (LIGBT) structure using a self-aligned trenched contact at the cathode of the device which significantly reduces the parasitic p-base resistance underneath the n+ cathode region to suppress the latch-up. The trenched cathode LIGBT (TC-LIGBT) structure is BiCMOS compatible and the LIGBT's with latching current densities over 1200 A/cm2 have been obtained using a 4 µm technology.",

author = "Mok, \{Philip K.T.\} and Azzouz Nezar and Salama, \{C. Andr{\'e} T.\}",

year = "1995",

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AU - Nezar, Azzouz

AU - Salama, C. André T.

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N2 - This paper discusses a modified insulated gate bipolar transistor (LIGBT) structure using a self-aligned trenched contact at the cathode of the device which significantly reduces the parasitic p-base resistance underneath the n+ cathode region to suppress the latch-up. The trenched cathode LIGBT (TC-LIGBT) structure is BiCMOS compatible and the LIGBT's with latching current densities over 1200 A/cm2 have been obtained using a 4 µm technology.

AB - This paper discusses a modified insulated gate bipolar transistor (LIGBT) structure using a self-aligned trenched contact at the cathode of the device which significantly reduces the parasitic p-base resistance underneath the n+ cathode region to suppress the latch-up. The trenched cathode LIGBT (TC-LIGBT) structure is BiCMOS compatible and the LIGBT's with latching current densities over 1200 A/cm2 have been obtained using a 4 µm technology.

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JO - IEEE Transactions on Electron Devices

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IS - 12

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A Self-Aligned Trenched Cathode Lateral Insulated Gate Bipolar Transistor with High Latch-Up Resistance

Abstract

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