a-Si: H/a-C: H amorphous semiconductor superlattices

Z. M. Chen; J. N. Wang; X. Y. Mei; G. L. Kong

doi:10.1016/0038-1098(86)90808-2

a-Si: H/a-C: H amorphous semiconductor superlattices

Z. M. Chen^*, J. N. Wang, X. Y. Mei, G. L. Kong

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

7 Citations (Scopus)

Abstract

A new type of amorphous semiconductor superlattices consisting of alternating layers of a-Si: H and a-C: H has been synthesized by r.f. plasma deposition in a single-chamber plasma reactor. The existence of well-defined layers are demonstrated by TEM studies and the in-depth profiles of the compositions obtained by Auger electron spectroscopy. In some cases, growth imperfections can be observed in the thinner layers. The changes in optical absorption gap of a-Si: H as a function of its layer thickness in the superlattices are interpreted as quantum size effects.

Original language	English
Pages (from-to)	379-381
Number of pages	3
Journal	Solid State Communications
Volume	58
Issue number	6
DOIs	https://doi.org/10.1016/0038-1098(86)90808-2
Publication status	Published - May 1986
Externally published	Yes

Access to Document

10.1016/0038-1098(86)90808-2

Cite this

@article{adab093d7db74a39a6d2d04eb9b3581f,

title = "a-Si: H/a-C: H amorphous semiconductor superlattices",

abstract = "A new type of amorphous semiconductor superlattices consisting of alternating layers of a-Si: H and a-C: H has been synthesized by r.f. plasma deposition in a single-chamber plasma reactor. The existence of well-defined layers are demonstrated by TEM studies and the in-depth profiles of the compositions obtained by Auger electron spectroscopy. In some cases, growth imperfections can be observed in the thinner layers. The changes in optical absorption gap of a-Si: H as a function of its layer thickness in the superlattices are interpreted as quantum size effects.",

author = "Chen, \{Z. M.\} and Wang, \{J. N.\} and Mei, \{X. Y.\} and Kong, \{G. L.\}",

year = "1986",

month = may,

doi = "10.1016/0038-1098(86)90808-2",

language = "English",

volume = "58",

pages = "379--381",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Ltd",

number = "6",

}

TY - JOUR

T1 - a-Si

T2 - H/a-C: H amorphous semiconductor superlattices

AU - Chen, Z. M.

AU - Wang, J. N.

AU - Mei, X. Y.

AU - Kong, G. L.

PY - 1986/5

Y1 - 1986/5

N2 - A new type of amorphous semiconductor superlattices consisting of alternating layers of a-Si: H and a-C: H has been synthesized by r.f. plasma deposition in a single-chamber plasma reactor. The existence of well-defined layers are demonstrated by TEM studies and the in-depth profiles of the compositions obtained by Auger electron spectroscopy. In some cases, growth imperfections can be observed in the thinner layers. The changes in optical absorption gap of a-Si: H as a function of its layer thickness in the superlattices are interpreted as quantum size effects.

AB - A new type of amorphous semiconductor superlattices consisting of alternating layers of a-Si: H and a-C: H has been synthesized by r.f. plasma deposition in a single-chamber plasma reactor. The existence of well-defined layers are demonstrated by TEM studies and the in-depth profiles of the compositions obtained by Auger electron spectroscopy. In some cases, growth imperfections can be observed in the thinner layers. The changes in optical absorption gap of a-Si: H as a function of its layer thickness in the superlattices are interpreted as quantum size effects.

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:A1986A932200010

UR - https://openalex.org/W2009229765

UR - https://www.scopus.com/pages/publications/0022722996

U2 - 10.1016/0038-1098(86)90808-2

DO - 10.1016/0038-1098(86)90808-2

M3 - Journal Article

SN - 0038-1098

VL - 58

SP - 379

EP - 381

JO - Solid State Communications

JF - Solid State Communications

IS - 6

ER -

a-Si: H/a-C: H amorphous semiconductor superlattices

Abstract

Access to Document

Other files and links

Fingerprint

Cite this