Abstract
The application of a segmented gate driver (SGD) to detect aging and provide automated compensation for SiC MOSFETs is presented. By dynamically modifying the gate resistance during switching transients, we can stretch the Miller plateau (MP) duration. The MP level is used as an indicator for the health condition of the SiC power MOSFET. A digital control circuit analyzes the aging effect and provides a control signal to an integrated boost converter, which powers the gate drive voltage. In this manner, the gate drive voltage can be adjusted to compensate for changes in the MOSFET performance. The same SGD can also be used to suppress gate ringing to protect the SiC power device against over/undershoot damage. This is of particular importance at elevated gate voltage.
| Original language | English |
|---|---|
| Title of host publication | 2021 33rd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2021 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 67-70 |
| Number of pages | 4 |
| ISBN (Electronic) | 9784886864222 |
| DOIs | |
| Publication status | Published - 30 May 2021 |
| Externally published | Yes |
| Event | 33rd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2021 - Virtual, Nagoya, Japan Duration: 30 May 2021 → 3 Jun 2021 |
Publication series
| Name | Proceedings of the International Symposium on Power Semiconductor Devices and ICs |
|---|---|
| Volume | 2021-May |
| ISSN (Print) | 1063-6854 |
Conference
| Conference | 33rd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2021 |
|---|---|
| Country/Territory | Japan |
| City | Virtual, Nagoya |
| Period | 30/05/21 → 3/06/21 |
Bibliographical note
Publisher Copyright:© 2021 The Institute of Electrical Engineering of Japan.
Keywords
- Miller plateau
- SiC MOSFET
- aging compensation
- gate ringing suppression
- segmented gate driver