A source-side injection erasable programmable read-only-memory (SI-EPROM) device

A. T. Wu; T. Y. Chan; P. K. Ko; Chenming Hu

doi:10.1109/EDL.1986.26465

A source-side injection erasable programmable read-only-memory (SI-EPROM) device

A. T. Wu, T. Y. Chan, P. K. Ko, Chenming Hu

Research output: Contribution to journal › Journal Article › peer-review

13 Citations (Scopus)

Abstract

A new erasable programmable read-only memory (EPROM) device with promise for low-voltage high-speed programming is described. This device is an asymmetrical n-channel stacked-gate MOSFET, with a short weak gate-control channel region introduced close to the source, At high gate bias, a strong channel electric field is created in this local region even at a relatively low drain voltage. Furthermore, the gate oxide field in this region also aids the injection of hot electrons into the floating gate. As a result, the source-side injection EPROM (SI-EPROM) has shown 103s programming speed at a drain voltage of 5 V.

Original language	English
Pages (from-to)	540-542
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	7
Issue number	9
DOIs	https://doi.org/10.1109/EDL.1986.26465
Publication status	Published - Sept 1986
Externally published	Yes

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10.1109/EDL.1986.26465

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title = "A source-side injection erasable programmable read-only-memory (SI-EPROM) device",

abstract = "A new erasable programmable read-only memory (EPROM) device with promise for low-voltage high-speed programming is described. This device is an asymmetrical n-channel stacked-gate MOSFET, with a short weak gate-control channel region introduced close to the source, At high gate bias, a strong channel electric field is created in this local region even at a relatively low drain voltage. Furthermore, the gate oxide field in this region also aids the injection of hot electrons into the floating gate. As a result, the source-side injection EPROM (SI-EPROM) has shown 103s programming speed at a drain voltage of 5 V.",

author = "Wu, \{A. T.\} and Chan, \{T. Y.\} and Ko, \{P. K.\} and Chenming Hu",

year = "1986",

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doi = "10.1109/EDL.1986.26465",

language = "English",

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T1 - A source-side injection erasable programmable read-only-memory (SI-EPROM) device

AU - Wu, A. T.

AU - Chan, T. Y.

AU - Ko, P. K.

AU - Hu, Chenming

PY - 1986/9

Y1 - 1986/9

N2 - A new erasable programmable read-only memory (EPROM) device with promise for low-voltage high-speed programming is described. This device is an asymmetrical n-channel stacked-gate MOSFET, with a short weak gate-control channel region introduced close to the source, At high gate bias, a strong channel electric field is created in this local region even at a relatively low drain voltage. Furthermore, the gate oxide field in this region also aids the injection of hot electrons into the floating gate. As a result, the source-side injection EPROM (SI-EPROM) has shown 103s programming speed at a drain voltage of 5 V.

AB - A new erasable programmable read-only memory (EPROM) device with promise for low-voltage high-speed programming is described. This device is an asymmetrical n-channel stacked-gate MOSFET, with a short weak gate-control channel region introduced close to the source, At high gate bias, a strong channel electric field is created in this local region even at a relatively low drain voltage. Furthermore, the gate oxide field in this region also aids the injection of hot electrons into the floating gate. As a result, the source-side injection EPROM (SI-EPROM) has shown 103s programming speed at a drain voltage of 5 V.

UR - https://www.scopus.com/pages/publications/0343269996

U2 - 10.1109/EDL.1986.26465

DO - 10.1109/EDL.1986.26465

M3 - Journal Article

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SN - 0741-3106

VL - 7

SP - 540

EP - 542

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 9

ER -

A source-side injection erasable programmable read-only-memory (SI-EPROM) device

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