A Subthreshold Conduction Model for Circuit Simulation of Submicron MOSFET

Philip C. Chan; Ralph Liu; Stephen K. Lau; Mario Pinto-Guedes

doi:10.1109/TCAD.1987.1270304

A Subthreshold Conduction Model for Circuit Simulation of Submicron MOSFET

Philip C. Chan, Ralph Liu, Stephen K. Lau, Mario Pinto-Guedes

Research output: Contribution to journal › Journal Article › peer-review

11 Citations (Scopus)

Abstract

A circuit simulation model for subthreshold conduction of MOSFET is developed. This model employs a novel interpolation scheme to provide smooth transition from the subthreshold region to the above-threshold region. This interpolation scheme ensures that both channel current and its derivatives (or conductances) are smooth. Since an interpolation scheme is used, a simple, independent, and physically based model can be used for the subthreshold and the above-threshold region. The model is applied to subthreshold conduction for submicron MOSFET. It is also successfully installed in a circuit simulation program.

Original language	English
Pages (from-to)	574-581
Number of pages	8
Journal	IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Volume	6
Issue number	4
DOIs	https://doi.org/10.1109/TCAD.1987.1270304
Publication status	Published - Jul 1987
Externally published	Yes

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10.1109/TCAD.1987.1270304

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AU - Liu, Ralph

AU - Lau, Stephen K.

AU - Pinto-Guedes, Mario

PY - 1987/7

Y1 - 1987/7

N2 - A circuit simulation model for subthreshold conduction of MOSFET is developed. This model employs a novel interpolation scheme to provide smooth transition from the subthreshold region to the above-threshold region. This interpolation scheme ensures that both channel current and its derivatives (or conductances) are smooth. Since an interpolation scheme is used, a simple, independent, and physically based model can be used for the subthreshold and the above-threshold region. The model is applied to subthreshold conduction for submicron MOSFET. It is also successfully installed in a circuit simulation program.

AB - A circuit simulation model for subthreshold conduction of MOSFET is developed. This model employs a novel interpolation scheme to provide smooth transition from the subthreshold region to the above-threshold region. This interpolation scheme ensures that both channel current and its derivatives (or conductances) are smooth. Since an interpolation scheme is used, a simple, independent, and physically based model can be used for the subthreshold and the above-threshold region. The model is applied to subthreshold conduction for submicron MOSFET. It is also successfully installed in a circuit simulation program.

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JO - IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

JF - IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

IS - 4

ER -

A Subthreshold Conduction Model for Circuit Simulation of Submicron MOSFET

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