TY - JOUR
T1 - A TaN-HfO2-Ge pMOSFET with novel SiH4 surface passivation
AU - Wu, Nan
AU - Zhang, Qingchun
AU - Zhu, Chunxiang
AU - Chan, D. S.H.
AU - Du, Anyan
AU - Balasubramanian, N.
AU - Li, M. F.
AU - Chin, Albert
AU - Sin, Johnny K.O.
AU - Kwong, D. L.
PY - 2004/9
Y1 - 2004/9
N2 - In this letter, we demonstrate a novel surface passivation process for HfO2 Ge pMOSFETs using SiH4 surface annealing prior to HfO2 deposition. By using SiH4 passivation, a uniform amorphous interfacial layer is formed after device fabrication. Electrical results show that the HfO2 Ge MOSFET with Si-passivation exhibits less frequency dispersion, narrower gate leakage current distribution, and a ∼ 140% higher peak mobility than that of the device with surface nitridation.
AB - In this letter, we demonstrate a novel surface passivation process for HfO2 Ge pMOSFETs using SiH4 surface annealing prior to HfO2 deposition. By using SiH4 passivation, a uniform amorphous interfacial layer is formed after device fabrication. Electrical results show that the HfO2 Ge MOSFET with Si-passivation exhibits less frequency dispersion, narrower gate leakage current distribution, and a ∼ 140% higher peak mobility than that of the device with surface nitridation.
UR - https://www.webofscience.com/wos/woscc/full-record/WOS:000223577600014
UR - https://openalex.org/W1496595606
UR - https://www.scopus.com/pages/publications/4444250961
U2 - 10.1109/LED.2004.833842
DO - 10.1109/LED.2004.833842
M3 - Journal Article
SN - 0741-3106
VL - 25
SP - 631
EP - 633
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
IS - 9
ER -