Access-region defect spectroscopy of DC-stressed N-polar GaN MIS-HEMTs

A. Sasikumar; A. Arehart; S. Kolluri; M. H. Wong; S. Keller; S. P. Denbaars; J. S. Speck; U. K. Mishra; S. A. Ringel

doi:10.1109/LED.2012.2188710

Access-region defect spectroscopy of DC-stressed N-polar GaN MIS-HEMTs

A. Sasikumar^*, A. Arehart, S. Kolluri, M. H. Wong, S. Keller, S. P. Denbaars, J. S. Speck, U. K. Mishra, S. A. Ringel

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

34 Citations (Scopus)

Abstract

Distinct trap levels in the drain access regions of an N-polar GaN MIS-HEMT are investigated before and after semi-on dc stressing by thermal and optical trap spectroscopies. The most prominent dc stress effect was an increase in concentration of a pre-existing electron trap with an activation energy of 0.54 eV, accompanied by a decrease in concentration of an electron trap with a 0.65-eV activation energy. These distinct states had similar concentrations before stressing, with the 0.54-eV trap concentration dominating (by 6 ×) after stress. Deeper states revealed via optical measurements showed a mild ∼20% increase in total concentration after stressing.

Original language	English
Article number	6175102
Pages (from-to)	658-660
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	33
Issue number	5
DOIs	https://doi.org/10.1109/LED.2012.2188710
Publication status	Published - May 2012
Externally published	Yes

Keywords

Constant current deep level optical spectroscopy (CID-DLOS)
Constant current deep level transient spectroscopy (CID-DLTS)
Dc stressing
Deep levels
GaN
High-electron-mobility transistor (HEMT)
Metal-organic chemical vapor deposition (MOCVD)
Trapping

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10.1109/LED.2012.2188710

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@article{e0476e468c2147ccb537f79343c9978c,

title = "Access-region defect spectroscopy of DC-stressed N-polar GaN MIS-HEMTs",

abstract = "Distinct trap levels in the drain access regions of an N-polar GaN MIS-HEMT are investigated before and after semi-on dc stressing by thermal and optical trap spectroscopies. The most prominent dc stress effect was an increase in concentration of a pre-existing electron trap with an activation energy of 0.54 eV, accompanied by a decrease in concentration of an electron trap with a 0.65-eV activation energy. These distinct states had similar concentrations before stressing, with the 0.54-eV trap concentration dominating (by 6 ×) after stress. Deeper states revealed via optical measurements showed a mild ∼20\% increase in total concentration after stressing.",

keywords = "Constant current deep level optical spectroscopy (CID-DLOS), Constant current deep level transient spectroscopy (CID-DLTS), Dc stressing, Deep levels, GaN, High-electron-mobility transistor (HEMT), Metal-organic chemical vapor deposition (MOCVD), Trapping",

author = "A. Sasikumar and A. Arehart and S. Kolluri and Wong, \{M. H.\} and S. Keller and Denbaars, \{S. P.\} and Speck, \{J. S.\} and Mishra, \{U. K.\} and Ringel, \{S. A.\}",

year = "2012",

month = may,

doi = "10.1109/LED.2012.2188710",

language = "English",

volume = "33",

pages = "658--660",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "5",

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TY - JOUR

T1 - Access-region defect spectroscopy of DC-stressed N-polar GaN MIS-HEMTs

AU - Sasikumar, A.

AU - Arehart, A.

AU - Kolluri, S.

AU - Wong, M. H.

AU - Keller, S.

AU - Denbaars, S. P.

AU - Speck, J. S.

AU - Mishra, U. K.

AU - Ringel, S. A.

PY - 2012/5

Y1 - 2012/5

N2 - Distinct trap levels in the drain access regions of an N-polar GaN MIS-HEMT are investigated before and after semi-on dc stressing by thermal and optical trap spectroscopies. The most prominent dc stress effect was an increase in concentration of a pre-existing electron trap with an activation energy of 0.54 eV, accompanied by a decrease in concentration of an electron trap with a 0.65-eV activation energy. These distinct states had similar concentrations before stressing, with the 0.54-eV trap concentration dominating (by 6 ×) after stress. Deeper states revealed via optical measurements showed a mild ∼20% increase in total concentration after stressing.

AB - Distinct trap levels in the drain access regions of an N-polar GaN MIS-HEMT are investigated before and after semi-on dc stressing by thermal and optical trap spectroscopies. The most prominent dc stress effect was an increase in concentration of a pre-existing electron trap with an activation energy of 0.54 eV, accompanied by a decrease in concentration of an electron trap with a 0.65-eV activation energy. These distinct states had similar concentrations before stressing, with the 0.54-eV trap concentration dominating (by 6 ×) after stress. Deeper states revealed via optical measurements showed a mild ∼20% increase in total concentration after stressing.

KW - Constant current deep level optical spectroscopy (CID-DLOS)

KW - Constant current deep level transient spectroscopy (CID-DLTS)

KW - Dc stressing

KW - Deep levels

KW - GaN

KW - High-electron-mobility transistor (HEMT)

KW - Metal-organic chemical vapor deposition (MOCVD)

KW - Trapping

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:000303322500010

UR - https://openalex.org/W2165817627

UR - https://www.scopus.com/pages/publications/84860371238

U2 - 10.1109/LED.2012.2188710

DO - 10.1109/LED.2012.2188710

M3 - Journal Article

SN - 0741-3106

VL - 33

SP - 658

EP - 660

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 5

M1 - 6175102

ER -

Access-region defect spectroscopy of DC-stressed N-polar GaN MIS-HEMTs

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Keywords

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